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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Single1N4003GP-E3/54
1N4003GP-E3/54 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

1N4003GP-E3/54 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
1N4003GP-E3/54
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-1N4003GP-E3/54
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 200V 1A DO204AL
Deskripsyon detaye
Pake
DO-204AL, DO-41, Axial
Done fèy
1N4001GP thru 1N4007GP Datasheet.pdf
RoHs Status
Nan stok: 277330

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon 1N4003GP-E3/54 Tech
Vishay General Semiconductor - Diodes Division - 1N4003GP-E3/54 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 1N4003GP-E3/54

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 200 V  
Teknoloji Standard  
Founisè Aparèy pake DO-204AL (DO-41)  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri SUPERECTIFIER®  
Tan rekiperasyon ranvèse (trr) 2 µs  
Pwodwi atribi Valè atribi  
Pake / Ka DO-204AL, DO-41, Axial  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -65°C ~ 175°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F 8pF @ 4V, 1MHz  
Nimewo pwodwi baz 1N4003  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 1N4003GP-E3/54.

Pwodwi atribi 1N4003GP-E3/54 1N4003G 1N4004 1N4003-E3/54
Nimewo Pati 1N4003GP-E3/54 1N4003G 1N4004 1N4003-E3/54
Manifakti Vishay General Semiconductor - Diodes Division Taiwan Semiconductor Corporation Diotec Semiconductor Vishay General Semiconductor - Diodes Division
Vitès Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Kapasite @ Vr, F 8pF @ 4V, 1MHz 10pF @ 4V, 1MHz - 15pF @ 4V, 1MHz
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Nimewo pwodwi baz 1N4003 - - 1N4003
Tan rekiperasyon ranvèse (trr) 2 µs - 1.5 µs -
Kouran - Mwayèn Rectified (Io) 1A 1A 1A 1A
Operating Tanperati - Junction -65°C ~ 175°C -55°C ~ 150°C -50°C ~ 175°C -55°C ~ 150°C
Seri SUPERECTIFIER® - - -
Voltage - DC ranvèse (Vr) (Max) 200 V 200 V 400 V 200 V
Teknoloji Standard Standard Standard Standard
Pake / Ka DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AC, DO-41, Axial DO-204AL, DO-41, Axial
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Founisè Aparèy pake DO-204AL (DO-41) DO-204AL (DO-41) DO-41/DO-204AC DO-204AL (DO-41)
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 1 A 1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 200 V 5 µA @ 1700 V 5 µA @ 200 V

1N4003GP-E3/54 fich PDF

Download 1N4003GP-E3/54 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 1N4003GP-E3/54 - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Additional Manufacturing Site 22/Feb/2023.pdf
Fich
1N4001GP thru 1N4007GP Datasheet.pdf

Shipment

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1N4003GP-E3/54 Image

1N4003GP-E3/54

Vishay General Semiconductor - Diodes Division
32D-1N4003GP-E3/54

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