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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Single1N4148-TAP
1N4148-TAP Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

1N4148-TAP - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
1N4148-TAP
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-1N4148-TAP
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 75V 300MA DO35
Deskripsyon detaye
Pake
DO-204AH, DO-35, Axial
Done fèy
1N4148.pdf
RoHs Status
Nan stok: 1222300

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon 1N4148-TAP Tech
Vishay General Semiconductor - Diodes Division - 1N4148-TAP espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 1N4148-TAP

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1 V @ 10 mA  
Voltage - DC ranvèse (Vr) (Max) 75 V  
Teknoloji Standard  
Founisè Aparèy pake DO-35 (DO-204AH)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 8 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-204AH, DO-35, Axial  
Pakèt Cut Tape (CT)  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 25 nA @ 20 V  
Kouran - Mwayèn Rectified (Io) 300mA  
Kapasite @ Vr, F 4pF @ 0V, 1MHz  
Nimewo pwodwi baz 1N4148  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 1N4148-TAP.

Pwodwi atribi 1N4148-TAP 1N4148-1 1N4148-E3-08 A2 H3 1N4148-35_AY_10001
Nimewo Pati 1N4148-TAP 1N4148-1 1N4148-E3-08 A2 H3 1N4148-35_AY_10001
Manifakti Vishay General Semiconductor - Diodes Division Microchip Technology Electro-Films (EFI) / Vishay PANJIT
Teknoloji Standard Standard - -
Pake / Ka DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial - -
Tan rekiperasyon ranvèse (trr) 8 ns 20 ns - -
Voltage - Forward (Vf) (Max) @ Si 1 V @ 10 mA 1.2 V @ 100 mA - -
Pakèt Cut Tape (CT) Bulk - -
Founisè Aparèy pake DO-35 (DO-204AH) DO-35 - -
Kouran - Mwayèn Rectified (Io) 300mA 200mA - -
Mounting Kalite Through Hole Through Hole - -
Kouran - Reverse Leakage @ Vr 25 nA @ 20 V 500 nA @ 75 V - -
Kapasite @ Vr, F 4pF @ 0V, 1MHz - - -
Seri - - - -
Voltage - DC ranvèse (Vr) (Max) 75 V 75 V - -
Vitès Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed - -
Nimewo pwodwi baz 1N4148 1N4148 - -
Operating Tanperati - Junction -65°C ~ 150°C -65°C ~ 175°C - -

1N4148-TAP fich PDF

Download 1N4148-TAP PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 1N4148-TAP - Vishay General Semiconductor - Diodes Division.

Fich
1N4148.pdf

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Sètifikasyon & Manm

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1N4148-TAP Image

1N4148-TAP

Vishay General Semiconductor - Diodes Division
32D-1N4148-TAP

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