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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Single1N4935-E3/54
1N4935-E3/54 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

1N4935-E3/54 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
1N4935-E3/54
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-1N4935-E3/54
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 200V 1A DO204AL
Deskripsyon detaye
Pake
DO-204AL, DO-41, Axial
Done fèy
1N4933 thru 1N4937.pdf
RoHs Status
Nan stok: 703450

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon 1N4935-E3/54 Tech
Vishay General Semiconductor - Diodes Division - 1N4935-E3/54 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 1N4935-E3/54

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 200 V  
Teknoloji Standard  
Founisè Aparèy pake DO-204AL (DO-41)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 200 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-204AL, DO-41, Axial  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -50°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F 12pF @ 4V, 1MHz  
Nimewo pwodwi baz 1N4935  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 1N4935-E3/54.

Pwodwi atribi 1N4935-E3/54 1N4936 1N4934-T 1N4935GP
Nimewo Pati 1N4935-E3/54 1N4936 1N4934-T 1N4935GP
Manifakti Vishay General Semiconductor - Diodes Division onsemi Diodes Incorporated Fairchild Semiconductor
Teknoloji Standard Standard Standard Standard
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 100 V 5 µA @ 200 V
Seri - - - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Bulk
Tan rekiperasyon ranvèse (trr) 200 ns 150 ns 200 ns 150 ns
Operating Tanperati - Junction -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 150°C -50°C ~ 150°C
Nimewo pwodwi baz 1N4935 1N4936 1N4934 -
Founisè Aparèy pake DO-204AL (DO-41) DO-41 DO-41 DO-204AL (DO-41)
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kouran - Mwayèn Rectified (Io) 1A 1A 1A 1A
Kapasite @ Vr, F 12pF @ 4V, 1MHz 12pF @ 4V, 1MHz 15pF @ 4V, 1MHz 12pF @ 4V, 1MHz
Voltage - DC ranvèse (Vr) (Max) 200 V 400 V 100 V 200 V
Pake / Ka DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial

1N4935-E3/54 fich PDF

Download 1N4935-E3/54 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 1N4935-E3/54 - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Multi 04/Mar/2022.pdf
Fich
1N4933 thru 1N4937.pdf

Shipment

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1N4935-E3/54 Image

1N4935-E3/54

Vishay General Semiconductor - Diodes Division
32D-1N4935-E3/54

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