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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Single1N5059GP-E3/54
1N5059GP-E3/54 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

1N5059GP-E3/54 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
1N5059GP-E3/54
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-1N5059GP-E3/54
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 200V 1A DO204AC
Pake
DO-204AC, DO-15, Axial
Done fèy
1N5059GP thru 1N5062GP.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 136860

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon 1N5059GP-E3/54 Tech
Vishay General Semiconductor - Diodes Division - 1N5059GP-E3/54 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 1N5059GP-E3/54

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 200 V  
Teknoloji Standard  
Founisè Aparèy pake DO-204AC (DO-15)  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri SUPERECTIFIER®  
Tan rekiperasyon ranvèse (trr) 2 µs  
Pwodwi atribi Valè atribi  
Pake / Ka DO-204AC, DO-15, Axial  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -65°C ~ 175°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F 15pF @ 4V, 1MHz  
Nimewo pwodwi baz 1N5059  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 1N5059GP-E3/54.

Pwodwi atribi 1N5059GP-E3/54 1N5061 1N5060TR 1N5060GP-E3/73
Nimewo Pati 1N5059GP-E3/54 1N5061 1N5060TR 1N5060GP-E3/73
Manifakti Vishay General Semiconductor - Diodes Division NTE Electronics, Inc Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Seri SUPERECTIFIER® - - SUPERECTIFIER®
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Founisè Aparèy pake DO-204AC (DO-15) SOD-64 SOD-57 DO-204AC (DO-15)
Kouran - Mwayèn Rectified (Io) 1A 2A 2A 1A
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 1 A 1.15 V @ 2.5 A 1.15 V @ 2.5 A 1.2 V @ 1 A
Voltage - DC ranvèse (Vr) (Max) 200 V 600 V 400 V 400 V
Pakèt Tape & Reel (TR) Bag Tape & Reel (TR) Tape & Box (TB)
Operating Tanperati - Junction -65°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -65°C ~ 175°C
Tan rekiperasyon ranvèse (trr) 2 µs 4 µs 4 µs 2 µs
Kapasite @ Vr, F 15pF @ 4V, 1MHz 40pF @ 0V, 1MHz 40pF @ 0V, 1MHz 15pF @ 4V, 1MHz
Teknoloji Standard Standard Avalanche Standard
Vitès Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V 1 µA @ 600 V 1 µA @ 400 V 5 µA @ 400 V
Pake / Ka DO-204AC, DO-15, Axial SOD-64, Axial SOD-57, Axial DO-204AC, DO-15, Axial
Nimewo pwodwi baz 1N5059 - 1N5060 1N5060

1N5059GP-E3/54 fich PDF

Download 1N5059GP-E3/54 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 1N5059GP-E3/54 - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Additional Manufacturing Site 22/Feb/2023.pdf
Fich
1N5059GP thru 1N5062GP.pdf

Shipment

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1N5059GP-E3/54 Image

1N5059GP-E3/54

Vishay General Semiconductor - Diodes Division
32D-1N5059GP-E3/54

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