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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Zener - Single1N5263B-TAP
1N5263B-TAP Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

1N5263B-TAP - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
1N5263B-TAP
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-1N5263B-TAP
ECAD modèl
Pati Deskripsyon
DIODE ZENER 56V 500MW DO35
Deskripsyon detaye
Pake
DO-204AH, DO-35, Axial
Done fèy
1N5221 to 1N5267.pdf
RoHs Status
Nan stok: 929850

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon 1N5263B-TAP Tech
Vishay General Semiconductor - Diodes Division - 1N5263B-TAP espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 1N5263B-TAP

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Zener (Nom) (Vz) 56 V  
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 200 mA  
Tolerans ±5%  
Founisè Aparèy pake DO-35 (DO-204AH)  
Seri -  
Pouvwa - Max 500 mW  
Pwodwi atribi Valè atribi  
Pake / Ka DO-204AH, DO-35, Axial  
Pakèt Cut Tape (CT)  
Operating Tanperati -  
Mounting Kalite Through Hole  
Enpedyans (Max) (Zzt) 150 Ohms  
Kouran - Reverse Leakage @ Vr 100 nA @ 43 V  
Nimewo pwodwi baz 1N5263  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 1N5263B-TAP.

Pwodwi atribi 1N5263B-TAP 1N5261B-TAP 1N5261B 1N5280B
Nimewo Pati 1N5263B-TAP 1N5261B-TAP 1N5261B 1N5280B
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division onsemi Microchip Technology
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 200 mA 1.1 V @ 200 mA 1.2 V @ 200 mA 1.5 V @ 200 mA
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Enpedyans (Max) (Zzt) 150 Ohms 105 Ohms 105 Ohms 2400 Ohms
Nimewo pwodwi baz 1N5263 1N5261 1N5261 -
Pakèt Cut Tape (CT) Cut Tape (CT) Bulk Bulk
Pouvwa - Max 500 mW 500 mW 500 mW 500 mW
Founisè Aparèy pake DO-35 (DO-204AH) DO-35 (DO-204AH) DO-35 DO-35 (DO-204AH)
Operating Tanperati - -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 175°C (TJ)
Kouran - Reverse Leakage @ Vr 100 nA @ 43 V 100 nA @ 36 V 100 nA @ 36 V 100 nA @ 144 V
Pake / Ka DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Tolerans ±5% ±5% ±5% ±5%
Seri - Automotive, AEC-Q101 - -
Voltage - Zener (Nom) (Vz) 56 V 47 V 47 V 190 V

1N5263B-TAP fich PDF

Download 1N5263B-TAP PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 1N5263B-TAP - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Wafer Source 12/Nov/2021.pdf
Fich
1N5221 to 1N5267.pdf

Shipment

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Sètifikasyon & Manm

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1N5263B-TAP Image

1N5263B-TAP

Vishay General Semiconductor - Diodes Division
32D-1N5263B-TAP

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