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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Single1N6392
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

1N6392 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
1N6392
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-1N6392
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 45V 60A DO203AB
Deskripsyon detaye
Pake
DO-203AB, DO-5, Stud
Done fèy
1N6392.pdf
Nan stok: 4150

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Espesifikasyon

Espesifikasyon 1N6392 Tech
Vishay General Semiconductor - Diodes Division - 1N6392 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 1N6392

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 680 mV @ 60 A  
Voltage - DC ranvèse (Vr) (Max) 45 V  
Teknoloji Schottky  
Founisè Aparèy pake DO-203AB (DO-5)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka DO-203AB, DO-5, Stud  
Pwodwi atribi Valè atribi  
Pakèt Bulk  
Operating Tanperati - Junction -55°C ~ 175°C  
Mounting Kalite Chassis, Stud Mount  
Kouran - Reverse Leakage @ Vr 20 mA @ 45 V  
Kouran - Mwayèn Rectified (Io) 60A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz 1N6392  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 1N6392.

Pwodwi atribi 1N6392 1N6484-E3/96 1N6391 1N6306
Nimewo Pati 1N6392 1N6484-E3/96 1N6391 1N6306
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Microchip Technology Microchip Technology
Voltage - Forward (Vf) (Max) @ Si 680 mV @ 60 A 1.1 V @ 1 A 500 mV @ 5 A 1.18 V @ 150 A
Teknoloji Schottky Standard Schottky Standard
Pake / Ka DO-203AB, DO-5, Stud DO-213AB, MELF (Glass) DO-203AA, DO-4, Stud DO-203AB, DO-5, Stud
Voltage - DC ranvèse (Vr) (Max) 45 V 1000 V 45 V 150 V
Operating Tanperati - Junction -55°C ~ 175°C -65°C ~ 175°C -55°C ~ 175°C -65°C ~ 175°C
Founisè Aparèy pake DO-203AB (DO-5) DO-213AB DO-203AA (DO-4) DO-5 (DO-203AB)
Nimewo pwodwi baz 1N6392 1N6484 1N6391 1N6306
Kouran - Mwayèn Rectified (Io) 60A 1A 25A 70A
Kapasite @ Vr, F - 8pF @ 4V, 1MHz 2000pF @ 5V, 1MHz 600pF @ 10V, 1MHz
Mounting Kalite Chassis, Stud Mount Surface Mount Stud Mount Stud Mount
Pakèt Bulk Tape & Reel (TR) Bulk Bulk
Kouran - Reverse Leakage @ Vr 20 mA @ 45 V 10 µA @ 1000 V 1.5 mA @ 45 V 25 µA @ 150 V
Vitès Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Seri - SUPERECTIFIER® Military, MIL-PRF-19500/553 Military, MIL-PRF-19500/550

1N6392 fich PDF

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Vishay General Semiconductor - Diodes Division

1N6392

Vishay General Semiconductor - Diodes Division
32D-1N6392

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