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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Array203CNQ080
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

203CNQ080 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
203CNQ080
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-203CNQ080
ECAD modèl
Pati Deskripsyon
DIODE MODULE 80V 100A TO244AB
Deskripsyon detaye
Pake
TO-244AB
Done fèy
203CNQ R Series.pdf
RoHs Status
Nan stok: 5460

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon 203CNQ080 Tech
Vishay General Semiconductor - Diodes Division - 203CNQ080 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 203CNQ080

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 860 mV @ 100 A  
Voltage - DC ranvèse (Vr) (Max) 80 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-244AB  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-244AB  
Pwodwi atribi Valè atribi  
Pakèt Bulk  
Operating Tanperati - Junction -55°C ~ 175°C  
Mounting Kalite Chassis Mount  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 3 mA @ 80 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 100A  
Nimewo pwodwi baz 203CNQ  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 203CNQ080.

Pwodwi atribi 203CNQ080 203CMQ100 203CMQ100 203CNQ080
Nimewo Pati 203CNQ080 203CMQ100 203CMQ100 203CNQ080
Manifakti Vishay General Semiconductor - Diodes Division SMC Diode Solutions Vishay General Semiconductor - Diodes Division SMC Diode Solutions
Voltage - Forward (Vf) (Max) @ Si 860 mV @ 100 A 860 mV @ 100 A 860 mV @ 100 A 860 mV @ 100 A
Operating Tanperati - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C
Teknoloji Schottky Schottky Schottky Schottky
Kouran - Reverse Leakage @ Vr 3 mA @ 80 V 3 mA @ 100 V 3 mA @ 100 V 3 mA @ 80 V
Voltage - DC ranvèse (Vr) (Max) 80 V 100 V 100 V 80 V
Konte genyen dyod 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 100A 100A 100A 100A
Mounting Kalite Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Pake / Ka TO-244AB PRM4 TO-244AB PRM4
Founisè Aparèy pake TO-244AB PRM4 (Isolated) TO-244AB PRM4 (Non-Isolated)
Seri - - - -
Nimewo pwodwi baz 203CNQ 203CMQ 203CMQ 203CNQ
Pakèt Bulk Bulk Bulk Bulk

203CNQ080 fich PDF

Download 203CNQ080 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 203CNQ080 - Vishay General Semiconductor - Diodes Division.

Fich
203CNQ R Series.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Vishay General Semiconductor - Diodes Division

203CNQ080

Vishay General Semiconductor - Diodes Division
32D-203CNQ080

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