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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Single50WQ10FN
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

50WQ10FN - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
50WQ10FN
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-50WQ10FN
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 100V 5.5A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
50WQ10FN.pdf
Nan stok: 4800

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon 50WQ10FN Tech
Vishay General Semiconductor - Diodes Division - 50WQ10FN espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 50WQ10FN

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 770 mV @ 5 A  
Voltage - DC ranvèse (Vr) (Max) 100 V  
Teknoloji Schottky  
Founisè Aparèy pake D-PAK (TO-252AA)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati - Junction -40°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 1 mA @ 100 V  
Kouran - Mwayèn Rectified (Io) 5.5A  
Kapasite @ Vr, F 183pF @ 5V, 1MHz  
Nimewo pwodwi baz 50WQ10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 50WQ10FN.

Pwodwi atribi 50WQ10FN 50WQ10FN 50WQ10FNTR 50WQ06FNTR
Nimewo Pati 50WQ10FN 50WQ10FN 50WQ10FNTR 50WQ06FNTR
Manifakti Vishay General Semiconductor - Diodes Division SMC Diode Solutions Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Operating Tanperati - Junction -40°C ~ 150°C -55°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite @ Vr, F 183pF @ 5V, 1MHz 250pF @ 5V, 1MHz 183pF @ 5V, 1MHz 360pF @ 5V, 1MHz
Kouran - Reverse Leakage @ Vr 1 mA @ 100 V 1 mA @ 100 V 1 mA @ 100 V 3 mA @ 60 V
Founisè Aparèy pake D-PAK (TO-252AA) DPAK D-PAK (TO-252AA) D-PAK (TO-252AA)
Teknoloji Schottky Schottky Schottky Schottky
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ Si 770 mV @ 5 A 770 mV @ 5 A 770 mV @ 5 A 570 mV @ 5 A
Seri - - - -
Voltage - DC ranvèse (Vr) (Max) 100 V 100 V 100 V 60 V
Nimewo pwodwi baz 50WQ10 50WQ 50WQ10 50WQ06
Kouran - Mwayèn Rectified (Io) 5.5A - 5.5A 5.5A

50WQ10FN fich PDF

Download 50WQ10FN PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 50WQ10FN - Vishay General Semiconductor - Diodes Division.

Fich
50WQ10FN.pdf

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Sètifikasyon & Manm

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Vishay General Semiconductor - Diodes Division

50WQ10FN

Vishay General Semiconductor - Diodes Division
32D-50WQ10FN

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