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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Single65PQ015
65PQ015 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

65PQ015 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
65PQ015
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-65PQ015
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 15V 65A TO247AC
Deskripsyon detaye
Pake
TO-247-3
Done fèy
65PQ015.pdf
Nan stok: 5010

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Espesifikasyon

Espesifikasyon 65PQ015 Tech
Vishay General Semiconductor - Diodes Division - 65PQ015 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 65PQ015

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 500 mV @ 65 A  
Voltage - DC ranvèse (Vr) (Max) 15 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-247AC  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-247-3  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati - Junction -55°C ~ 125°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 18 mA @ 15 V  
Kouran - Mwayèn Rectified (Io) 65A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz 65PQ015  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 65PQ015.

Pwodwi atribi 65PQ015 SD101BWS-7-F ES07B-GS08 LL4148
Nimewo Pati 65PQ015 SD101BWS-7-F ES07B-GS08 LL4148
Manifakti Vishay General Semiconductor - Diodes Division Diodes Incorporated Vishay General Semiconductor - Diodes Division onsemi
Kapasite @ Vr, F - 2.1pF @ 0V, 1MHz 4pF @ 4V, 1MHz 4pF @ 0V, 1MHz
Founisè Aparèy pake TO-247AC SOD-323 DO-219AB (SMF) SOD-80
Teknoloji Schottky Schottky Standard Standard
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Seri - - Automotive, AEC-Q101 -
Voltage - DC ranvèse (Vr) (Max) 15 V 50 V 100 V 100 V
Mounting Kalite Through Hole Surface Mount Surface Mount Surface Mount
Voltage - Forward (Vf) (Max) @ Si 500 mV @ 65 A 950 mV @ 15 mA 980 mV @ 1 A 1 V @ 10 mA
Vitès Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed
Nimewo pwodwi baz 65PQ015 SD101 ES07 LL414
Kouran - Reverse Leakage @ Vr 18 mA @ 15 V 200 nA @ 40 V 10 µA @ 100 V 25 nA @ 20 V
Pake / Ka TO-247-3 SC-76, SOD-323 DO-219AB DO-213AC, MINI-MELF, SOD-80
Kouran - Mwayèn Rectified (Io) 65A 15mA 500mA 200mA
Operating Tanperati - Junction -55°C ~ 125°C -65°C ~ 125°C -55°C ~ 150°C -55°C ~ 175°C

65PQ015 fich PDF

Download 65PQ015 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 65PQ015 - Vishay General Semiconductor - Diodes Division.

Fich
65PQ015.pdf

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65PQ015

Vishay General Semiconductor - Diodes Division
32D-65PQ015

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