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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Single80EPS08
80EPS08 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

80EPS08 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
80EPS08
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-80EPS08
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 800V 80A TO247AC
Deskripsyon detaye
Pake
TO-247-3
Done fèy
80EPSxx.pdf
Nan stok: 4240

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Espesifikasyon

Espesifikasyon 80EPS08 Tech
Vishay General Semiconductor - Diodes Division - 80EPS08 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 80EPS08

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.17 V @ 80 A  
Voltage - DC ranvèse (Vr) (Max) 800 V  
Teknoloji Standard  
Founisè Aparèy pake TO-247AC  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-247-3  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati - Junction -40°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 100 µA @ 800 V  
Kouran - Mwayèn Rectified (Io) 80A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz 80EPS08  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 80EPS08.

Pwodwi atribi 80EPS08 MURS340HE3/57T RS1GB-13-F MBRA130LT3
Nimewo Pati 80EPS08 MURS340HE3/57T RS1GB-13-F MBRA130LT3
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Diodes Incorporated onsemi
Voltage - Forward (Vf) (Max) @ Si 1.17 V @ 80 A 1.28 V @ 3 A 1.3 V @ 1 A 410 mV @ 1 A
Pake / Ka TO-247-3 DO-214AB, SMC DO-214AA, SMB DO-214AC, SMA
Vitès Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC ranvèse (Vr) (Max) 800 V 400 V 400 V 30 V
Kapasite @ Vr, F - - 15pF @ 4V, 1MHz -
Nimewo pwodwi baz 80EPS08 MURS340 RS1G MBRA130
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Through Hole Surface Mount Surface Mount Surface Mount
Teknoloji Standard Standard Standard Schottky
Operating Tanperati - Junction -40°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -
Founisè Aparèy pake TO-247AC DO-214AB (SMC) SMB SMA
Kouran - Mwayèn Rectified (Io) 80A 3A 1A 1A
Seri - Automotive, AEC-Q101 - -
Kouran - Reverse Leakage @ Vr 100 µA @ 800 V 10 µA @ 400 V 5 µA @ 400 V 1 mA @ 30 V

80EPS08 fich PDF

Download 80EPS08 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 80EPS08 - Vishay General Semiconductor - Diodes Division.

Fich
80EPSxx.pdf

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Sètifikasyon & Manm

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80EPS08 Image

80EPS08

Vishay General Semiconductor - Diodes Division
32D-80EPS08

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