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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - Single8ETH03
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

8ETH03 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
8ETH03
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-8ETH03
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 300V 8A TO220AC
Deskripsyon detaye
Pake
TO-220-2
Done fèy
8ETH03 PbF.pdf
Nan stok: 4970

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon 8ETH03 Tech
Vishay General Semiconductor - Diodes Division - 8ETH03 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 8ETH03

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.25 V @ 8 A  
Voltage - DC ranvèse (Vr) (Max) 300 V  
Teknoloji Standard  
Founisè Aparèy pake TO-220AC  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri FRED Pt®  
Tan rekiperasyon ranvèse (trr) 35 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-2  
Pakèt Tube  
Operating Tanperati - Junction -65°C ~ 175°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 20 µA @ 300 V  
Kouran - Mwayèn Rectified (Io) 8A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz 8ETH03  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 8ETH03.

Pwodwi atribi 8ETH03 8ETH06 8ETL06FP 8ETL06
Nimewo Pati 8ETH03 8ETH06 8ETL06FP 8ETL06
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Kapasite @ Vr, F - - - -
Voltage - DC ranvèse (Vr) (Max) 300 V 600 V 600 V 600 V
Pake / Ka TO-220-2 TO-220-2 TO-220-2 Full Pack TO-220-2
Kouran - Reverse Leakage @ Vr 20 µA @ 300 V 50 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V
Pakèt Tube Tube Tube Tube
Kouran - Mwayèn Rectified (Io) 8A 8A 8A 8A
Seri FRED Pt® FRED Pt® FRED Pt® FRED Pt®
Nimewo pwodwi baz 8ETH03 8ETH06 8ETL06 8ETL06
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Tan rekiperasyon ranvèse (trr) 35 ns 25 ns 250 ns 250 ns
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Operating Tanperati - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ Si 1.25 V @ 8 A 2.4 V @ 8 A 1.05 V @ 8 A 1.05 V @ 8 A
Teknoloji Standard Standard Standard Standard
Founisè Aparèy pake TO-220AC TO-220AC TO-220-2 Full Pack TO-220AC

8ETH03 fich PDF

Download 8ETH03 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 8ETH03 - Vishay General Semiconductor - Diodes Division.

Fich
8ETH03 PbF.pdf

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Sètifikasyon & Manm

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Vishay General Semiconductor - Diodes Division

8ETH03

Vishay General Semiconductor - Diodes Division
32D-8ETH03

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