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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArrayBAS40-04-E3-08
BAS40-04-E3-08 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BAS40-04-E3-08 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
BAS40-04-E3-08
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-BAS40-04-E3-08
ECAD modèl
Pati Deskripsyon
DIODE ARRAY SCHOTTKY 40V SOT23
Deskripsyon detaye
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
BAS40-0x.pdf
RoHs Status
Nan stok: 525800

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon BAS40-04-E3-08 Tech
Vishay General Semiconductor - Diodes Division - BAS40-04-E3-08 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - BAS40-04-E3-08

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1 V @ 40 mA  
Voltage - DC ranvèse (Vr) (Max) 40 V  
Teknoloji Schottky  
Founisè Aparèy pake SOT-23-3  
Vitès Small Signal =< 200mA (Io), Any Speed  
Seri -  
Tan rekiperasyon ranvèse (trr) 5 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction 125°C (Max)  
Mounting Kalite Surface Mount  
Konte genyen dyod 1 Pair Series Connection  
Kouran - Reverse Leakage @ Vr 100 nA @ 30 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 200mA (DC)  
Nimewo pwodwi baz BAS40  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division BAS40-04-E3-08.

Pwodwi atribi BAS40-04-E3-08 BAS40-04E6327 BAS40-04LT1 BAS40-04-HE3-08
Nimewo Pati BAS40-04-E3-08 BAS40-04E6327 BAS40-04LT1 BAS40-04-HE3-08
Manifakti Vishay General Semiconductor - Diodes Division Infineon Technologies onsemi Vishay General Semiconductor - Diodes Division
Seri - - - Automotive, AEC-Q101
Voltage - DC ranvèse (Vr) (Max) 40 V 40 V 40 V 40 V
Voltage - Forward (Vf) (Max) @ Si 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA
Nimewo pwodwi baz BAS40 - BAS40 BAS40
Kouran - Reverse Leakage @ Vr 100 nA @ 30 V 1 µA @ 30 V 1 µA @ 25 V 100 nA @ 30 V
Konte genyen dyod 1 Pair Series Connection 1 Pair Series Connection 1 Pair Series Connection 1 Pair Series Connection
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 200mA (DC) 120mA (DC) 120mA (DC) 200mA
Operating Tanperati - Junction 125°C (Max) 150°C -55°C ~ 150°C 125°C (Max)
Teknoloji Schottky - Schottky Schottky
Founisè Aparèy pake SOT-23-3 PG-SOT23-3-11 SOT-23-3 (TO-236) SOT-23-3
Tan rekiperasyon ranvèse (trr) 5 ns - - 5 ns
Pakèt Tape & Reel (TR) - Tape & Reel (TR) Tape & Reel (TR)
Vitès Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

BAS40-04-E3-08 fich PDF

Download BAS40-04-E3-08 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou BAS40-04-E3-08 - Vishay General Semiconductor - Diodes Division.

Fich
BAS40-0x.pdf

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BAS40-04-E3-08 Image

BAS40-04-E3-08

Vishay General Semiconductor - Diodes Division
32D-BAS40-04-E3-08

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