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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleBYWB29-100-E3/81
BYWB29-100-E3/81 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BYWB29-100-E3/81 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
BYWB29-100-E3/81
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-BYWB29-100-E3/81
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 100V 8A TO263AB
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
BYW(F,B)29-50 thru 29-200.pdf
RoHs Status
Nan stok: 55420

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon BYWB29-100-E3/81 Tech
Vishay General Semiconductor - Diodes Division - BYWB29-100-E3/81 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - BYWB29-100-E3/81

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.3 V @ 20 A  
Voltage - DC ranvèse (Vr) (Max) 100 V  
Teknoloji Standard  
Founisè Aparèy pake TO-263AB (D²PAK)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 25 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 10 µA @ 100 V  
Kouran - Mwayèn Rectified (Io) 8A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz BYWB29  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division BYWB29-100-E3/81.

Pwodwi atribi BYWB29-100-E3/81 BYWF29-150-E3/45 BYW98-200 BYWF29-200-E3/45
Nimewo Pati BYWB29-100-E3/81 BYWF29-150-E3/45 BYW98-200 BYWF29-200-E3/45
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division STMicroelectronics Vishay General Semiconductor - Diodes Division
Founisè Aparèy pake TO-263AB (D²PAK) ITO-220AC DO-201AD ITO-220AC
Kouran - Mwayèn Rectified (Io) 8A 8A 3A 8A
Tan rekiperasyon ranvèse (trr) 25 ns 25 ns 35 ns 25 ns
Nimewo pwodwi baz BYWB29 BYWF29 BYW98 BYWF29
Voltage - Forward (Vf) (Max) @ Si 1.3 V @ 20 A 1.3 V @ 20 A 1.2 V @ 9 A 1.3 V @ 20 A
Teknoloji Standard Standard Standard Standard
Kapasite @ Vr, F - - - -
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-2 Full Pack, Isolated Tab DO-201AD, Axial TO-220-2 Full Pack, Isolated Tab
Operating Tanperati - Junction -65°C ~ 150°C -65°C ~ 150°C 150°C (Max) -65°C ~ 150°C
Pakèt Tape & Reel (TR) Tube Cut Tape (CT) Tube
Mounting Kalite Surface Mount Through Hole Through Hole Through Hole
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC ranvèse (Vr) (Max) 100 V 150 V 200 V 200 V
Kouran - Reverse Leakage @ Vr 10 µA @ 100 V 10 µA @ 150 V 10 µA @ 200 V 10 µA @ 200 V
Seri - - - -

BYWB29-100-E3/81 fich PDF

Download BYWB29-100-E3/81 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou BYWB29-100-E3/81 - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò
Packaging Information.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 31/Aug/2018.pdf
Fich
BYW(F,B)29-50 thru 29-200.pdf

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Sètifikasyon & Manm

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BYWB29-100-E3/81 Image

BYWB29-100-E3/81

Vishay General Semiconductor - Diodes Division
32D-BYWB29-100-E3/81

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