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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Zener - SingleBZD17C12P-E3-18
BZD17C12P-E3-18 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

BZD17C12P-E3-18 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
BZD17C12P-E3-18
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-BZD17C12P-E3-18
ECAD modèl
Pati Deskripsyon
DIODE ZENER 12V 800MW DO219AB
Pake
DO-219AB
Done fèy
BZD17C3V6P thru BZD17C200P.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 673700

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon BZD17C12P-E3-18 Tech
Vishay General Semiconductor - Diodes Division - BZD17C12P-E3-18 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - BZD17C12P-E3-18

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Zener (Nom) (Vz) 12 V  
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 200 mA  
Tolerans -  
Founisè Aparèy pake DO-219AB (SMF)  
Seri -  
Pouvwa - Max 800 mW  
Pwodwi atribi Valè atribi  
Pake / Ka DO-219AB  
Pakèt Tape & Reel (TR)  
Operating Tanperati -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 3 µA @ 9.1 V  
Nimewo pwodwi baz BZD17  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division BZD17C12P-E3-18.

Pwodwi atribi BZD17C12P-E3-18 BZD17C10P-E3-08 BZD17C15P-E3-08 BZD17C13P-E3-08
Nimewo Pati BZD17C12P-E3-18 BZD17C10P-E3-08 BZD17C15P-E3-08 BZD17C13P-E3-08
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka DO-219AB DO-219AB DO-219AB DO-219AB
Tolerans - - - -
Voltage - Zener (Nom) (Vz) 12 V 10 V 15 V 13 V
Seri - - - -
Founisè Aparèy pake DO-219AB (SMF) DO-219AB (SMF) DO-219AB (SMF) DO-219AB (SMF)
Nimewo pwodwi baz BZD17 BZD17 BZD17 BZD17
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pouvwa - Max 800 mW 800 mW 800 mW 800 mW
Kouran - Reverse Leakage @ Vr 3 µA @ 9.1 V 1 µA @ 7.5 V 1 µA @ 11 V 2 µA @ 10 V
Operating Tanperati -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 200 mA 1.2 V @ 200 mA 1.2 V @ 200 mA 1.2 V @ 200 mA

BZD17C12P-E3-18 fich PDF

Download BZD17C12P-E3-18 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou BZD17C12P-E3-18 - Vishay General Semiconductor - Diodes Division.

Fich
BZD17C3V6P thru BZD17C200P.pdf
Asanble PCN/orijin
Mult Dev 27/Apr/2023.pdf

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BZD17C12P-E3-18 Image

BZD17C12P-E3-18

Vishay General Semiconductor - Diodes Division
32D-BZD17C12P-E3-18

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