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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Zener - SingleBZD27B47P-M3-08
BZD27B47P-M3-08 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BZD27B47P-M3-08 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
BZD27B47P-M3-08
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-BZD27B47P-M3-08
ECAD modèl
Pati Deskripsyon
DIODE ZENER 47V 800MW DO219AB
Deskripsyon detaye
Pake
DO-219AB
Done fèy
BZD27B-M Series.pdf
RoHs Status
Nan stok: 264660

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Kantite

Espesifikasyon

Espesifikasyon BZD27B47P-M3-08 Tech
Vishay General Semiconductor - Diodes Division - BZD27B47P-M3-08 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - BZD27B47P-M3-08

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Zener (Nom) (Vz) 47 V  
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 200 mA  
Tolerans -  
Founisè Aparèy pake DO-219AB (SMF)  
Seri BZD27B-M  
Pouvwa - Max 800 mW  
Pwodwi atribi Valè atribi  
Pake / Ka DO-219AB  
Pakèt Tape & Reel (TR)  
Operating Tanperati -65°C ~ 175°C  
Mounting Kalite Surface Mount  
Enpedyans (Max) (Zzt) 45 Ohms  
Kouran - Reverse Leakage @ Vr 1 µA @ 36 V  
Nimewo pwodwi baz BZD27B47  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division BZD27B47P-M3-08.

Pwodwi atribi BZD27B47P-M3-08 BZD27B82P-M3-08 BZD27B24P-HE3-08 BZD27B12P-M3-08
Nimewo Pati BZD27B47P-M3-08 BZD27B82P-M3-08 BZD27B24P-HE3-08 BZD27B12P-M3-08
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Founisè Aparèy pake DO-219AB (SMF) DO-219AB (SMF) DO-219AB (SMF) DO-219AB (SMF)
Nimewo pwodwi baz BZD27B47 BZD27B82 BZD27B24 BZD27
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Voltage - Zener (Nom) (Vz) 47 V 82 V 24 V 12 V
Seri BZD27B-M BZD27B-M Automotive, AEC-Q101, BZD27B BZD27B-M
Pouvwa - Max 800 mW 800 mW 800 mW 800 mW
Operating Tanperati -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 200 mA 1.2 V @ 200 mA 1.2 V @ 200 mA 1.2 V @ 200 mA
Enpedyans (Max) (Zzt) 45 Ohms 100 Ohms 15 Ohms 7 Ohms
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka DO-219AB DO-219AB DO-219AB DO-219AB
Kouran - Reverse Leakage @ Vr 1 µA @ 36 V 1 µA @ 62 V 1 µA @ 18 V 3 µA @ 9.1 V
Tolerans - - - -

BZD27B47P-M3-08 fich PDF

Download BZD27B47P-M3-08 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou BZD27B47P-M3-08 - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Mult Dev 27/Apr/2023.pdf
Fich
BZD27B-M Series.pdf

Shipment

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BZD27B47P-M3-08 Image

BZD27B47P-M3-08

Vishay General Semiconductor - Diodes Division
32D-BZD27B47P-M3-08

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