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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Zener - SingleBZD27C18P-HE3-08
BZD27C18P-HE3-08 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BZD27C18P-HE3-08 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
BZD27C18P-HE3-08
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-BZD27C18P-HE3-08
ECAD modèl
Pati Deskripsyon
DIODE ZENER 18V 800MW DO219AB
Deskripsyon detaye
Pake
DO-219AB
Done fèy
BZD27 Series.pdf
RoHs Status
Nan stok: 73710

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon BZD27C18P-HE3-08 Tech
Vishay General Semiconductor - Diodes Division - BZD27C18P-HE3-08 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - BZD27C18P-HE3-08

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Zener (Nom) (Vz) 18 V  
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 200 mA  
Tolerans -  
Founisè Aparèy pake DO-219AB (SMF)  
Seri Automotive, AEC-Q101, BZD27C  
Pouvwa - Max 800 mW  
Pwodwi atribi Valè atribi  
Pake / Ka DO-219AB  
Pakèt Tape & Reel (TR)  
Operating Tanperati -65°C ~ 175°C  
Mounting Kalite Surface Mount  
Enpedyans (Max) (Zzt) 15 Ohms  
Kouran - Reverse Leakage @ Vr 1 µA @ 13 V  
Nimewo pwodwi baz BZD27  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division BZD27C18P-HE3-08.

Pwodwi atribi BZD27C18P-HE3-08 BZD27C18P-E3-08 BZD27C18P BZD27C180P-E3-08
Nimewo Pati BZD27C18P-HE3-08 BZD27C18P-E3-08 BZD27C18P BZD27C180P-E3-08
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Taiwan Semiconductor Corporation Vishay General Semiconductor - Diodes Division
Voltage - Zener (Nom) (Vz) 18 V 18 V 17.95 V 180 V
Tolerans - - ±6.41% -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pouvwa - Max 800 mW 800 mW 1 W 800 mW
Pake / Ka DO-219AB DO-219AB SOD-123 DO-219AB
Kouran - Reverse Leakage @ Vr 1 µA @ 13 V 1 µA @ 13 V 1 µA @ 13 V 1 µA @ 130 V
Enpedyans (Max) (Zzt) 15 Ohms 15 Ohms 15 Ohms 400 Ohms
Nimewo pwodwi baz BZD27 BZD27 BZD27 BZD27C180
Founisè Aparèy pake DO-219AB (SMF) DO-219AB (SMF) Sub SMA DO-219AB (SMF)
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 200 mA 1.2 V @ 200 mA 1.2 V @ 200 mA 1.2 V @ 200 mA
Seri Automotive, AEC-Q101, BZD27C BZD27C - BZD27C
Operating Tanperati -65°C ~ 175°C -65°C ~ 175°C -55°C ~ 175°C (TJ) -65°C ~ 175°C

BZD27C18P-HE3-08 fich PDF

Download BZD27C18P-HE3-08 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou BZD27C18P-HE3-08 - Vishay General Semiconductor - Diodes Division.

Fich
BZD27 Series.pdf
Asanble PCN/orijin
Mult Devices 27/Apr/2023.pdf

Shipment

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Sètifikasyon & Manm

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BZD27C18P-HE3-08 Image

BZD27C18P-HE3-08

Vishay General Semiconductor - Diodes Division
32D-BZD27C18P-HE3-08

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