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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Zener - SingleBZM55B51-TR
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BZM55B51-TR - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
BZM55B51-TR
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-BZM55B51-TR
ECAD modèl
Pati Deskripsyon
DIODE ZENER 51V 500MW MICROMELF
Deskripsyon detaye
Pake
2-SMD, No Lead
Done fèy
BZM55 Series.pdf
RoHs Status
Nan stok: 725800

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon BZM55B51-TR Tech
Vishay General Semiconductor - Diodes Division - BZM55B51-TR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - BZM55B51-TR

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Zener (Nom) (Vz) 51 V  
Voltage - Forward (Vf) (Max) @ Si 1.5 V @ 200 mA  
Tolerans -  
Founisè Aparèy pake MicroMELF  
Seri Automotive, AEC-Q101, BZM55  
Pouvwa - Max 500 mW  
Pwodwi atribi Valè atribi  
Pake / Ka 2-SMD, No Lead  
Pakèt Tape & Reel (TR)  
Operating Tanperati -65°C ~ 175°C  
Mounting Kalite Surface Mount  
Enpedyans (Max) (Zzt) 700 Ohms  
Kouran - Reverse Leakage @ Vr 100 µA @ 39 V  
Nimewo pwodwi baz BZM55B51  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division BZM55B51-TR.

Pwodwi atribi BZM55B51-TR BZM55B4V3-TR BZM55B3V0 BZM55B6V8
Nimewo Pati BZM55B51-TR BZM55B4V3-TR BZM55B3V0 BZM55B6V8
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Rectron USA Rectron USA
Pake / Ka 2-SMD, No Lead 2-SMD, No Lead 2-SMD, No Lead 2-SMD, No Lead
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -
Enpedyans (Max) (Zzt) 700 Ohms 600 Ohms 85 Ohms 8 Ohms
Mounting Kalite Surface Mount Surface Mount - -
Kouran - Reverse Leakage @ Vr 100 µA @ 39 V 1 µA @ 1 V 4 µA @ 1 V 100 nA @ 3 V
Tolerans - - - -
Nimewo pwodwi baz BZM55B51 BZM55B4V3 - -
Seri Automotive, AEC-Q101, BZM55 Automotive, AEC-Q101, BZM55 - -
Pouvwa - Max 500 mW 500 mW 500 mW 500 mW
Operating Tanperati -65°C ~ 175°C -65°C ~ 175°C - -
Founisè Aparèy pake MicroMELF MicroMELF MicroMELF MicroMELF
Voltage - Zener (Nom) (Vz) 51 V 4.3 V 3 V 6.8 V
Voltage - Forward (Vf) (Max) @ Si 1.5 V @ 200 mA 1.5 V @ 200 mA - -

BZM55B51-TR fich PDF

Download BZM55B51-TR PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou BZM55B51-TR - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Wafer Source 12/Nov/2021.pdf
Fich
BZM55 Series.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Vishay General Semiconductor - Diodes Division

BZM55B51-TR

Vishay General Semiconductor - Diodes Division
32D-BZM55B51-TR

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