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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Zener - SingleBZT52C30-E3-08
BZT52C30-E3-08 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BZT52C30-E3-08 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
BZT52C30-E3-08
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-BZT52C30-E3-08
ECAD modèl
Pati Deskripsyon
DIODE ZENER 30V 410MW SOD123
Deskripsyon detaye
Pake
SOD-123
Done fèy
BZT52 Series.pdf
RoHs Status
Nan stok: 928000

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon BZT52C30-E3-08 Tech
Vishay General Semiconductor - Diodes Division - BZT52C30-E3-08 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - BZT52C30-E3-08

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Zener (Nom) (Vz) 30 V  
Tolerans ±5%  
Founisè Aparèy pake SOD-123  
Seri BZT52  
Pouvwa - Max 410 mW  
Pake / Ka SOD-123  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Enpedyans (Max) (Zzt) 80 Ohms  
Kouran - Reverse Leakage @ Vr 100 nA @ 22.5 V  
Nimewo pwodwi baz BZT52C30  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division BZT52C30-E3-08.

Pwodwi atribi BZT52C30-E3-08 BZT52C33 BZT52C30S BZT52C33
Nimewo Pati BZT52C30-E3-08 BZT52C33 BZT52C30S BZT52C33
Manifakti Vishay General Semiconductor - Diodes Division Yangjie Technology Yangjie Technology Taiwan Semiconductor Corporation
Tolerans ±5% ±6.06% ±5% ±5%
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka SOD-123 SOD-123 SC-76, SOD-323 SOD-123F
Seri BZT52 - - -
Founisè Aparèy pake SOD-123 SOD-123 SOD-323 SOD-123F
Operating Tanperati -55°C ~ 150°C -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Kouran - Reverse Leakage @ Vr 100 nA @ 22.5 V 100 nA @ 23.1 V 100 nA @ 21 V 45 nA @ 23 V
Pouvwa - Max 410 mW 500 mW 200 mW 500 mW
Enpedyans (Max) (Zzt) 80 Ohms 80 Ohms 80 Ohms 80 Ohms
Voltage - Zener (Nom) (Vz) 30 V 33 V 30 V 33 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Nimewo pwodwi baz BZT52C30 - - BZT52C

BZT52C30-E3-08 fich PDF

Download BZT52C30-E3-08 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou BZT52C30-E3-08 - Vishay General Semiconductor - Diodes Division.

PCN obsolescence/ eol
PCN-DD-005-2023-REV-0 3-30-23.pdf
Fich
BZT52 Series.pdf

Shipment

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Sètifikasyon & Manm

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BZT52C30-E3-08 Image

BZT52C30-E3-08

Vishay General Semiconductor - Diodes Division
32D-BZT52C30-E3-08

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