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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleEGF1A-E3/67A
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

EGF1A-E3/67A - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
EGF1A-E3/67A
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-EGF1A-E3/67A
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 50V 1A DO214BA
Deskripsyon detaye
Pake
DO-214BA
Done fèy
EGF1A - EGF1D.pdf
RoHs Status
Nan stok: 80180

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon EGF1A-E3/67A Tech
Vishay General Semiconductor - Diodes Division - EGF1A-E3/67A espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - EGF1A-E3/67A

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1 V @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 50 V  
Teknoloji Standard  
Founisè Aparèy pake DO-214BA (GF1)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri SUPERECTIFIER®  
Tan rekiperasyon ranvèse (trr) 50 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-214BA  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -65°C ~ 175°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 5 µA @ 50 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F 15pF @ 4V, 1MHz  
Nimewo pwodwi baz EGF1  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division EGF1A-E3/67A.

Pwodwi atribi EGF1A-E3/67A EGF1B-E3/5CA EGF1C-E3/5CA EGF1C-E3/67A
Nimewo Pati EGF1A-E3/67A EGF1B-E3/5CA EGF1C-E3/5CA EGF1C-E3/67A
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Pake / Ka DO-214BA DO-214BA DO-214BA DO-214BA
Kouran - Mwayèn Rectified (Io) 1A 1A 1A 1A
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Voltage - DC ranvèse (Vr) (Max) 50 V 100 V 150 V 150 V
Operating Tanperati - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Kouran - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 150 V 5 µA @ 150 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ Si 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Founisè Aparèy pake DO-214BA (GF1) DO-214BA (GF1) DO-214BA (GF1) DO-214BA (GF1)
Tan rekiperasyon ranvèse (trr) 50 ns 50 ns 50 ns 50 ns
Kapasite @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Seri SUPERECTIFIER® SUPERECTIFIER® SUPERECTIFIER® SUPERECTIFIER®
Nimewo pwodwi baz EGF1 EGF1 EGF1 EGF1
Teknoloji Standard Standard Standard Standard

EGF1A-E3/67A fich PDF

Download EGF1A-E3/67A PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou EGF1A-E3/67A - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò
Packaging Information.pdf
Asanble PCN/orijin
Mult Dev Mfg Site Chg 16/Aug/2019.pdf
Fich
EGF1A - EGF1D.pdf

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Sètifikasyon & Manm

Wè plis
Vishay General Semiconductor - Diodes Division

EGF1A-E3/67A

Vishay General Semiconductor - Diodes Division
32D-EGF1A-E3/67A

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