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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleES1DHE3_A/H
ES1DHE3_A/H Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

ES1DHE3_A/H - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
ES1DHE3_A/H
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-ES1DHE3_A/H
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 200V 1A DO214AC
Pake
DO-214AC, SMA
Done fèy
ES1A thru ES1D.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 306600

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon ES1DHE3_A/H Tech
Vishay General Semiconductor - Diodes Division - ES1DHE3_A/H espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - ES1DHE3_A/H

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 920 mV @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 200 V  
Teknoloji Standard  
Founisè Aparèy pake DO-214AC (SMA)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Automotive, AEC-Q101  
Tan rekiperasyon ranvèse (trr) 25 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-214AC, SMA  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F 10pF @ 4V, 1MHz  
Nimewo pwodwi baz ES1  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division ES1DHE3_A/H.

Pwodwi atribi ES1DHE3_A/H ES1DL RVG ES1DHE3_A/I ES1DAF
Nimewo Pati ES1DHE3_A/H ES1DL RVG ES1DHE3_A/I ES1DAF
Manifakti Vishay General Semiconductor - Diodes Division TSC (Taiwan Semiconductor) Vishay General Semiconductor - Diodes Division Fairchild Semiconductor
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Pake / Ka DO-214AC, SMA DO-219AB DO-214AC, SMA DO-214AD, SMAF
Kapasite @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Nimewo pwodwi baz ES1 - ES1 ES1D
Voltage - Forward (Vf) (Max) @ Si 920 mV @ 1 A 950mV @ 1A 920 mV @ 1 A 950 mV @ 1 A
Pakèt Tape & Reel (TR) - Tape & Reel (TR) Bulk
Voltage - DC ranvèse (Vr) (Max) 200 V 200V 200 V 200 V
Teknoloji Standard - Standard Standard
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Tan rekiperasyon ranvèse (trr) 25 ns 35ns 25 ns 34 ns
Seri Automotive, AEC-Q101 - Automotive, AEC-Q101 Automotive, AEC-Q101
Kouran - Mwayèn Rectified (Io) 1A 1A 1A 1A
Founisè Aparèy pake DO-214AC (SMA) Sub SMA DO-214AC (SMA) DO-214AD (SMAF)
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery = 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V 5µA @ 200V 5 µA @ 200 V 1 µA @ 200 V

ES1DHE3_A/H fich PDF

Download ES1DHE3_A/H PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou ES1DHE3_A/H - Vishay General Semiconductor - Diodes Division.

Fich
ES1A thru ES1D.pdf
Asanble PCN/orijin
Assembly Site 26/Aug/2021.pdf

Shipment

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Sètifikasyon & Manm

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ES1DHE3_A/H Image

ES1DHE3_A/H

Vishay General Semiconductor - Diodes Division
32D-ES1DHE3_A/H

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