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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleES2GHE3/52T
ES2GHE3/52T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

ES2GHE3/52T - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
ES2GHE3/52T
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-ES2GHE3/52T
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 400V 2A DO214AA
Deskripsyon detaye
Pake
DO-214AA, SMB
Done fèy
ES2F & ES2G.pdf
RoHs Status
Nan stok: 3920

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon ES2GHE3/52T Tech
Vishay General Semiconductor - Diodes Division - ES2GHE3/52T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - ES2GHE3/52T

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 2 A  
Voltage - DC ranvèse (Vr) (Max) 400 V  
Teknoloji Standard  
Founisè Aparèy pake DO-214AA (SMB)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Automotive, AEC-Q101  
Tan rekiperasyon ranvèse (trr) 50 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-214AA, SMB  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 10 µA @ 400 V  
Kouran - Mwayèn Rectified (Io) 2A  
Kapasite @ Vr, F 15pF @ 4V, 1MHz  
Nimewo pwodwi baz ES2  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division ES2GHE3/52T.

Pwodwi atribi ES2GHE3/52T ES2G-E3/52T ES2GHE3_A/H ES2G-E3/5BT
Nimewo Pati ES2GHE3/52T ES2G-E3/52T ES2GHE3_A/H ES2G-E3/5BT
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 2 A 1.1 V @ 2 A 1.1 V @ 2 A 1.1 V @ 2 A
Kouran - Mwayèn Rectified (Io) 2A 2A 2A 2A
Founisè Aparèy pake DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Pake / Ka DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Nimewo pwodwi baz ES2 ES2 ES2G ES2G
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Seri Automotive, AEC-Q101 - Automotive, AEC-Q101 -
Tan rekiperasyon ranvèse (trr) 50 ns 50 ns 35 ns 50 ns
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Teknoloji Standard Standard Standard Standard
Voltage - DC ranvèse (Vr) (Max) 400 V 400 V 300 V 400 V
Kapasite @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kouran - Reverse Leakage @ Vr 10 µA @ 400 V 10 µA @ 400 V 10 µA @ 50 V 10 µA @ 400 V

ES2GHE3/52T fich PDF

Download ES2GHE3/52T PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou ES2GHE3/52T - Vishay General Semiconductor - Diodes Division.

PCN Lòt
DD-005-2015-Rev-0 26/Jan2015.pdf
Fich
ES2F & ES2G.pdf

Shipment

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Sètifikasyon & Manm

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ES2GHE3/52T Image

ES2GHE3/52T

Vishay General Semiconductor - Diodes Division
32D-ES2GHE3/52T

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