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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArrayFEPF16FT-E3/45
FEPF16FT-E3/45 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FEPF16FT-E3/45 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
FEPF16FT-E3/45
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-FEPF16FT-E3/45
ECAD modèl
Pati Deskripsyon
DIODE ARRAY GP 300V 8A ITO220AB
Deskripsyon detaye
Pake
TO-220-3 Full Pack, Isolated Tab
Done fèy
FEP(F,B)16AT - 16JT.pdf
RoHs Status
Nan stok: 50510

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon FEPF16FT-E3/45 Tech
Vishay General Semiconductor - Diodes Division - FEPF16FT-E3/45 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - FEPF16FT-E3/45

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.3 V @ 8 A  
Voltage - DC ranvèse (Vr) (Max) 300 V  
Teknoloji Standard  
Founisè Aparèy pake ITO-220AB  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 50 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-3 Full Pack, Isolated Tab  
Pakèt Tube  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Through Hole  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 10 µA @ 300 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 8A  
Nimewo pwodwi baz FEPF16  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division FEPF16FT-E3/45.

Pwodwi atribi FEPF16FT-E3/45 FEPF16DT-E3/45 FEPF16JT-E3/45 FEPB6DT-E3/81
Nimewo Pati FEPF16FT-E3/45 FEPF16DT-E3/45 FEPF16JT-E3/45 FEPB6DT-E3/81
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Seri - - - -
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Tan rekiperasyon ranvèse (trr) 50 ns 35 ns 50 ns 35 ns
Pake / Ka TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Founisè Aparèy pake ITO-220AB ITO-220AB ITO-220AB TO-263AB (D²PAK)
Konte genyen dyod 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Voltage - Forward (Vf) (Max) @ Si 1.3 V @ 8 A 950 mV @ 8 A 1.5 V @ 8 A 975 mV @ 3 A
Pakèt Tube Tube Tube Tape & Reel (TR)
Nimewo pwodwi baz FEPF16 FEPF16 FEPF16 FEPB6
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 8A 8A 8A 6A
Voltage - DC ranvèse (Vr) (Max) 300 V 200 V 600 V 200 V
Teknoloji Standard Standard Standard Standard
Kouran - Reverse Leakage @ Vr 10 µA @ 300 V 10 µA @ 200 V 10 µA @ 600 V 5 µA @ 200 V
Mounting Kalite Through Hole Through Hole Through Hole Surface Mount
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

FEPF16FT-E3/45 fich PDF

Download FEPF16FT-E3/45 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou FEPF16FT-E3/45 - Vishay General Semiconductor - Diodes Division.

Fich
FEP(F,B)16AT - 16JT.pdf
Lòt dokiman ki gen rapò
Packaging Information.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 31/Aug/2018.pdf

Shipment

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Sètifikasyon & Manm

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FEPF16FT-E3/45 Image

FEPF16FT-E3/45

Vishay General Semiconductor - Diodes Division
32D-FEPF16FT-E3/45

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