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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleFESF16DT-E3/45
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FESF16DT-E3/45 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
FESF16DT-E3/45
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-FESF16DT-E3/45
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 200V 16A ITO220AC
Deskripsyon detaye
Pake
TO-220-2 Full Pack, Isolated Tab
Done fèy
FES16xT, FESF16xT, FESB16xT.pdf
RoHs Status
Nan stok: 48421

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon FESF16DT-E3/45 Tech
Vishay General Semiconductor - Diodes Division - FESF16DT-E3/45 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - FESF16DT-E3/45

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 975 mV @ 16 A  
Voltage - DC ranvèse (Vr) (Max) 200 V  
Teknoloji Standard  
Founisè Aparèy pake ITO-220AC  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 35 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-2 Full Pack, Isolated Tab  
Pakèt Tube  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 10 µA @ 200 V  
Kouran - Mwayèn Rectified (Io) 16A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz FESF16  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division FESF16DT-E3/45.

Pwodwi atribi FESF16DT-E3/45 FESF16FT-E3/45 FESF8DT-E3/45 FESF16GT-E3/45
Nimewo Pati FESF16DT-E3/45 FESF16FT-E3/45 FESF8DT-E3/45 FESF16GT-E3/45
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Kouran - Mwayèn Rectified (Io) 16A 16A 8A 16A
Voltage - DC ranvèse (Vr) (Max) 200 V 300 V 200 V 400 V
Operating Tanperati - Junction -65°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C -65°C ~ 150°C
Pake / Ka TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab
Teknoloji Standard Standard Standard Standard
Pakèt Tube Tube Tube Tube
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kapasite @ Vr, F - - - -
Seri - - - -
Founisè Aparèy pake ITO-220AC ITO-220AC ITO-220AC ITO-220AC
Kouran - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 300 V 10 µA @ 200 V 10 µA @ 400 V
Tan rekiperasyon ranvèse (trr) 35 ns 50 ns 35 ns 50 ns
Voltage - Forward (Vf) (Max) @ Si 975 mV @ 16 A 1.3 V @ 16 A 950 mV @ 8 A 1.3 V @ 16 A
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Nimewo pwodwi baz FESF16 FESF16 FESF8 FESF16

FESF16DT-E3/45 fich PDF

Download FESF16DT-E3/45 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou FESF16DT-E3/45 - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò
Packaging Information.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 31/Aug/2018.pdf
Fich
FES16xT, FESF16xT, FESB16xT.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Vishay General Semiconductor - Diodes Division

FESF16DT-E3/45

Vishay General Semiconductor - Diodes Division
32D-FESF16DT-E3/45

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