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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Bridge rèktifikateurGBPC1208W-E4/51
GBPC1208W-E4/51 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

GBPC1208W-E4/51 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
GBPC1208W-E4/51
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-GBPC1208W-E4/51
ECAD modèl
Pati Deskripsyon
BRIDGE RECT 1P 800V 12A GBPC-W
Deskripsyon detaye
Pake
4-Square, GBPC-W
Done fèy
GBPC12,15,25,35.pdf
GBPC12,15,25,35.pdf
RoHs Status
Nan stok: 9703

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon GBPC1208W-E4/51 Tech
Vishay General Semiconductor - Diodes Division - GBPC1208W-E4/51 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - GBPC1208W-E4/51

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Peak Ranvèse (Max) 800 V  
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 6 A  
Teknoloji Standard  
Founisè Aparèy pake GBPC-W  
Seri -  
Pake / Ka 4-Square, GBPC-W  
Pwodwi atribi Valè atribi  
Pakèt Bulk  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite dyod Single Phase  
Kouran - Reverse Leakage @ Vr 5 µA @ 800 V  
Kouran - Mwayèn Rectified (Io) 12 A  
Nimewo pwodwi baz GBPC1208  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division GBPC1208W-E4/51.

Pwodwi atribi GBPC1208W-E4/51 GBPC1506W GBPC12005W GBPC1506W
Nimewo Pati GBPC1208W-E4/51 GBPC1506W GBPC12005W GBPC1506W
Manifakti Vishay General Semiconductor - Diodes Division SURGE onsemi onsemi
Mounting Kalite Through Hole - Through Hole Through Hole
Kouran - Reverse Leakage @ Vr 5 µA @ 800 V 5 µA @ 600 V 5 µA @ 50 V 5 µA @ 600 V
Teknoloji Standard Standard Standard Standard
Voltage - Peak Ranvèse (Max) 800 V 600 V 50 V 600 V
Nimewo pwodwi baz GBPC1208 GBPC15 GBPC12 GBPC1506
Kalite dyod Single Phase Single Phase Single Phase Single Phase
Seri - GBPC15 - -
Pakèt Bulk Bag Bulk Bulk
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 6 A 1.1 V @ 7.5 A 1.1 V @ 6 A 1.1 V @ 7.5 A
Founisè Aparèy pake GBPC-W - GBPC-W GBPC-W
Pake / Ka 4-Square, GBPC-W - 4-Square, GBPC-W 4-Square, GBPC-W
Operating Tanperati -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Mwayèn Rectified (Io) 12 A 15 A 12 A 15 A

GBPC1208W-E4/51 fich PDF

Download GBPC1208W-E4/51 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou GBPC1208W-E4/51 - Vishay General Semiconductor - Diodes Division.

PCN konsepsyon/spesifikasyon
DD-015-2015-Rev-0 07/Apr/2015.pdf
Fich
GBPC12,15,25,35.pdf
Html fich
GBPC12,15,25,35.pdf
Asanble PCN/orijin
Additional Mfg Location 13/Apr/2016.pdf

Shipment

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Sètifikasyon & Manm

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GBPC1208W-E4/51 Image

GBPC1208W-E4/51

Vishay General Semiconductor - Diodes Division
32D-GBPC1208W-E4/51

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