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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleGI752-E3/54
GI752-E3/54 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

GI752-E3/54 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
GI752-E3/54
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-GI752-E3/54
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 200V 6A P600
Deskripsyon detaye
Pake
P600, Axial
Done fèy
GI750 thru GI758.pdf
RoHs Status
Nan stok: 66450

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon GI752-E3/54 Tech
Vishay General Semiconductor - Diodes Division - GI752-E3/54 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - GI752-E3/54

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 900 mV @ 6 A  
Voltage - DC ranvèse (Vr) (Max) 200 V  
Teknoloji Standard  
Founisè Aparèy pake P600  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 2.5 µs  
Pwodwi atribi Valè atribi  
Pake / Ka P600, Axial  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -50°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V  
Kouran - Mwayèn Rectified (Io) 6A  
Kapasite @ Vr, F 150pF @ 4V, 1MHz  
Nimewo pwodwi baz GI752  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division GI752-E3/54.

Pwodwi atribi GI752-E3/54 GI750-E3/54 1N1582 1N1352
Nimewo Pati GI752-E3/54 GI750-E3/54 1N1582 1N1352
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Microchip Technology Microchip Technology
Operating Tanperati - Junction -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 200°C -
Voltage - Forward (Vf) (Max) @ Si 900 mV @ 6 A 900 mV @ 6 A 1.3 V @ 30 A -
Founisè Aparèy pake P600 P600 DO-4 (DO-203AA) -
Kouran - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 50 V 10 µA @ 100 V -
Pake / Ka P600, Axial P600, Axial DO-203AA, DO-4, Stud -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Bulk Bulk
Teknoloji Standard Standard Standard -
Nimewo pwodwi baz GI752 GI750 - 1N1352
Mounting Kalite Through Hole Through Hole Stud Mount -
Vitès Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) -
Tan rekiperasyon ranvèse (trr) 2.5 µs 2.5 µs - -
Seri - - - *
Kouran - Mwayèn Rectified (Io) 6A 6A 16A -
Kapasite @ Vr, F 150pF @ 4V, 1MHz 150pF @ 4V, 1MHz - -
Voltage - DC ranvèse (Vr) (Max) 200 V 50 V 100 V -

GI752-E3/54 fich PDF

Download GI752-E3/54 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou GI752-E3/54 - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Multi 04/Mar/2022.pdf
Fich
GI750 thru GI758.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
GI752-E3/54 Image

GI752-E3/54

Vishay General Semiconductor - Diodes Division
32D-GI752-E3/54

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