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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Bridge rèktifikateurKBU8G-E4/51
KBU8G-E4/51 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

KBU8G-E4/51 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
KBU8G-E4/51
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-KBU8G-E4/51
ECAD modèl
Pati Deskripsyon
BRIDGE RECT 1PHASE 400V 8A KBU
Deskripsyon detaye
Pake
4-SIP, KBU
Done fèy
KBU8A thru KBU8M.pdf
KBU8A thru KBU8M.pdf
RoHs Status
Nan stok: 11945

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon KBU8G-E4/51 Tech
Vishay General Semiconductor - Diodes Division - KBU8G-E4/51 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - KBU8G-E4/51

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Peak Ranvèse (Max) 400 V  
Voltage - Forward (Vf) (Max) @ Si 1 V @ 8 A  
Teknoloji Standard  
Founisè Aparèy pake KBU  
Seri -  
Pake / Ka 4-SIP, KBU  
Pwodwi atribi Valè atribi  
Pakèt Tray  
Operating Tanperati -50°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite dyod Single Phase  
Kouran - Reverse Leakage @ Vr 10 µA @ 400 V  
Kouran - Mwayèn Rectified (Io) 8 A  
Nimewo pwodwi baz KBU8  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division KBU8G-E4/51.

Pwodwi atribi KBU8G-E4/51 KBU8K KBU806 KBU8K
Nimewo Pati KBU8G-E4/51 KBU8K KBU806 KBU8K
Manifakti Vishay General Semiconductor - Diodes Division GeneSiC Semiconductor Yangzhou Yangjie Electronic Technology Co.,Ltd onsemi
Operating Tanperati -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz KBU8 KBU8 - KBU8
Pake / Ka 4-SIP, KBU 4-SIP, KBU 4-ESIP, KBU 4-SIP, KBU
Pakèt Tray Bulk Box Bulk
Kouran - Reverse Leakage @ Vr 10 µA @ 400 V 10 µA @ 800 V 10 µA @ 600 V 10 µA @ 800 V
Voltage - Peak Ranvèse (Max) 400 V 800 V 600 V 800 V
Founisè Aparèy pake KBU KBU KBU KBU
Teknoloji Standard Standard Standard Standard
Voltage - Forward (Vf) (Max) @ Si 1 V @ 8 A 1 V @ 8 A 1.1 V @ 4 A 1 V @ 8 A
Kalite dyod Single Phase Single Phase Single Phase Single Phase
Seri - - - -
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kouran - Mwayèn Rectified (Io) 8 A 8 A 8 A 8 A

KBU8G-E4/51 fich PDF

Download KBU8G-E4/51 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou KBU8G-E4/51 - Vishay General Semiconductor - Diodes Division.

PCN konsepsyon/spesifikasyon
DD-015-2015-Rev-0 07/Apr/2015.pdf
Asanble PCN/orijin
Mult Dev Wafer Chg 30/Nov/2018.pdf
Fich
KBU8A thru KBU8M.pdf
Html fich
KBU8A thru KBU8M.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
KBU8G-E4/51 Image

KBU8G-E4/51

Vishay General Semiconductor - Diodes Division
32D-KBU8G-E4/51

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