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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleMBR1035
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

MBR1035 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
MBR1035
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-MBR1035
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 35V 10A TO220AC
Deskripsyon detaye
Pake
TO-220-2
Done fèy
MBR(B)1035/45.pdf
Nan stok: 4380

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon MBR1035 Tech
Vishay General Semiconductor - Diodes Division - MBR1035 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - MBR1035

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 570 mV @ 10 A  
Voltage - DC ranvèse (Vr) (Max) 35 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-220AC  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-220-2  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 100 µA @ 35 V  
Kouran - Mwayèn Rectified (Io) 10A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz MBR103  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division MBR1035.

Pwodwi atribi MBR1035 MBR1040 MBR1020LL_R1_00001 MBR1035G
Nimewo Pati MBR1035 MBR1040 MBR1020LL_R1_00001 MBR1035G
Manifakti Vishay General Semiconductor - Diodes Division Diodes Incorporated Panjit International Inc. onsemi
Voltage - Forward (Vf) (Max) @ Si 570 mV @ 10 A 840 mV @ 10 A 450 mV @ 1 A 840 mV @ 20 A
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Seri - - - SWITCHMODE™
Kouran - Reverse Leakage @ Vr 100 µA @ 35 V 100 µA @ 40 V 25 mA @ 20 V 100 µA @ 35 V
Founisè Aparèy pake TO-220AC TO-220AC SOD-123FL TO-220-2
Kapasite @ Vr, F - 400pF @ 4V, 1MHz - -
Operating Tanperati - Junction -65°C ~ 150°C -65°C ~ 150°C -55°C ~ 125°C -65°C ~ 175°C
Voltage - DC ranvèse (Vr) (Max) 35 V 40 V 20 V 35 V
Kouran - Mwayèn Rectified (Io) 10A 10A 1A 10A
Pakèt Tube Tube Tape & Reel (TR) Tube
Teknoloji Schottky Schottky Schottky Schottky
Pake / Ka TO-220-2 TO-220-2 SOD-123F TO-220-2
Mounting Kalite Through Hole Through Hole Surface Mount Through Hole
Nimewo pwodwi baz MBR103 MBR104 MBR1020 MBR103

MBR1035 fich PDF

Download MBR1035 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou MBR1035 - Vishay General Semiconductor - Diodes Division.

Fich
MBR(B)1035/45.pdf

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Sètifikasyon & Manm

Wè plis
Vishay General Semiconductor - Diodes Division

MBR1035

Vishay General Semiconductor - Diodes Division
32D-MBR1035

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