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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArrayMBRB20100CT-E3/8W
MBRB20100CT-E3/8W Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

MBRB20100CT-E3/8W - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
MBRB20100CT-E3/8W
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-MBRB20100CT-E3/8W
ECAD modèl
Pati Deskripsyon
DIODE ARRAY SCHOTTKY 100V TO263
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
MBR(F,B)2090CT,20100CT.pdf
RoHs Status
Nan stok: 32251

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Kantite

Espesifikasyon

Espesifikasyon MBRB20100CT-E3/8W Tech
Vishay General Semiconductor - Diodes Division - MBRB20100CT-E3/8W espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - MBRB20100CT-E3/8W

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 800 mV @ 10 A  
Voltage - DC ranvèse (Vr) (Max) 100 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-263AB (D²PAK)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri TMBS®  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Surface Mount  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 100 µA @ 100 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 10A  
Nimewo pwodwi baz MBRB20100  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division MBRB20100CT-E3/8W.

Pwodwi atribi MBRB20100CT-E3/8W MBRB20100CT MBRB20100CT MBRB20100CTT4G
Nimewo Pati MBRB20100CT-E3/8W MBRB20100CT MBRB20100CT MBRB20100CTT4G
Manifakti Vishay General Semiconductor - Diodes Division Yangzhou Yangjie Electronic Technology Co.,Ltd onsemi onsemi
Voltage - Forward (Vf) (Max) @ Si 800 mV @ 10 A 800 mV @ 10 A 850 mV @ 10 A 850 mV @ 10 A
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Konte genyen dyod 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC ranvèse (Vr) (Max) 100 V 100 V 100 V 100 V
Nimewo pwodwi baz MBRB20100 - MBRB201 MBRB20100
Founisè Aparèy pake TO-263AB (D²PAK) TO-263 D²PAK D²PAK
Operating Tanperati - Junction -65°C ~ 150°C -55°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Pakèt Tape & Reel (TR) Tube Tube Tape & Reel (TR)
Kouran - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V
Teknoloji Schottky Schottky Schottky Schottky
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri TMBS® - SWITCHMODE™ SWITCHMODE™
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 10A 20A 10A 10A

MBRB20100CT-E3/8W fich PDF

Download MBRB20100CT-E3/8W PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou MBRB20100CT-E3/8W - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò
Packaging Information.pdf
Asanble PCN/orijin
Mult Dev Assembly Chg 20/Sep/2019.pdf
Fich
MBR(F,B)2090CT,20100CT.pdf

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MBRB20100CT-E3/8W Image

MBRB20100CT-E3/8W

Vishay General Semiconductor - Diodes Division
32D-MBRB20100CT-E3/8W

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