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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleMSS1P3HM3_A/H
MSS1P3HM3_A/H Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

MSS1P3HM3_A/H - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
MSS1P3HM3_A/H
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-MSS1P3HM3_A/H
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 30V 1A MICROSMP
Deskripsyon detaye
Pake
MicroSMP
Done fèy
MSS1P3,P4.pdf
RoHs Status
Nan stok: 591550

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon MSS1P3HM3_A/H Tech
Vishay General Semiconductor - Diodes Division - MSS1P3HM3_A/H espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - MSS1P3HM3_A/H

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 550 mV @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 30 V  
Teknoloji Schottky  
Founisè Aparèy pake MicroSMP (DO-219AD)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Automotive, AEC-Q101  
Pake / Ka MicroSMP  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 200 µA @ 30 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F 50pF @ 4V, 1MHz  
Nimewo pwodwi baz MSS1P3  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division MSS1P3HM3_A/H.

Pwodwi atribi MSS1P3HM3_A/H MSS1P3U-M3/89A MSS1P3-M3/89A MSS1P3L-M3/89A
Nimewo Pati MSS1P3HM3_A/H MSS1P3U-M3/89A MSS1P3-M3/89A MSS1P3L-M3/89A
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Voltage - Forward (Vf) (Max) @ Si 550 mV @ 1 A 400 mV @ 1 A 550 mV @ 1 A 500 mV @ 1 A
Founisè Aparèy pake MicroSMP (DO-219AD) MicroSMP (DO-219AD) MicroSMP (DO-219AD) MicroSMP (DO-219AD)
Kouran - Mwayèn Rectified (Io) 1A 1A 1A 1A
Teknoloji Schottky Schottky Schottky Schottky
Kouran - Reverse Leakage @ Vr 200 µA @ 30 V 1.2 mA @ 30 V 200 µA @ 30 V 250 µA @ 30 V
Nimewo pwodwi baz MSS1P3 MSS1P3 MSS1P3 MSS1P3
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 125°C -55°C ~ 150°C -55°C ~ 150°C
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka MicroSMP MicroSMP MicroSMP MicroSMP
Voltage - DC ranvèse (Vr) (Max) 30 V 30 V 30 V 30 V
Seri Automotive, AEC-Q101 eSMP® eSMP® eSMP®
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kapasite @ Vr, F 50pF @ 4V, 1MHz - - 65pF @ 4V, 1MHz
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

MSS1P3HM3_A/H fich PDF

Download MSS1P3HM3_A/H PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou MSS1P3HM3_A/H - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Mult Dev A/T Chgs 23/Nov/2021.pdf
Fich
MSS1P3,P4.pdf

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Sètifikasyon & Manm

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MSS1P3HM3_A/H Image

MSS1P3HM3_A/H

Vishay General Semiconductor - Diodes Division
32D-MSS1P3HM3_A/H

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