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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleMSS2P3HM3_A/H
MSS2P3HM3_A/H Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

MSS2P3HM3_A/H - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
MSS2P3HM3_A/H
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-MSS2P3HM3_A/H
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 30V 2A MICROSMP
Deskripsyon detaye
Pake
MicroSMP
Done fèy
MSS2P2 & MSS2P3.pdf
RoHs Status
Nan stok: 460750

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Kantite

Espesifikasyon

Espesifikasyon MSS2P3HM3_A/H Tech
Vishay General Semiconductor - Diodes Division - MSS2P3HM3_A/H espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - MSS2P3HM3_A/H

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 600 mV @ 2 A  
Voltage - DC ranvèse (Vr) (Max) 30 V  
Teknoloji Schottky  
Founisè Aparèy pake MicroSMP (DO-219AD)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Automotive, AEC-Q101, eSMP®  
Pake / Ka MicroSMP  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 250 µA @ 30 V  
Kouran - Mwayèn Rectified (Io) 2A  
Kapasite @ Vr, F 65pF @ 4V, 1MHz  
Nimewo pwodwi baz MSS2P3  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division MSS2P3HM3_A/H.

Pwodwi atribi MSS2P3HM3_A/H MSS2P3-M3/89A MSS2P2-M3/89A MSS3-T/R
Nimewo Pati MSS2P3HM3_A/H MSS2P3-M3/89A MSS2P2-M3/89A MSS3-T/R
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Kouran - Mwayèn Rectified (Io) 2A 2A 2A -
Kouran - Reverse Leakage @ Vr 250 µA @ 30 V 250 µA @ 30 V 250 µA @ 20 V -
Founisè Aparèy pake MicroSMP (DO-219AD) MicroSMP (DO-219AD) MicroSMP (DO-219AD) -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) -
Pake / Ka MicroSMP MicroSMP MicroSMP -
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) -
Seri Automotive, AEC-Q101, eSMP® eSMP® eSMP® -
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -
Kapasite @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz -
Voltage - DC ranvèse (Vr) (Max) 30 V 30 V 20 V -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Voltage - Forward (Vf) (Max) @ Si 600 mV @ 2 A 600 mV @ 2 A 600 mV @ 2 A -
Teknoloji Schottky Schottky Schottky -
Nimewo pwodwi baz MSS2P3 MSS2P3 MSS2P2 -

MSS2P3HM3_A/H fich PDF

Download MSS2P3HM3_A/H PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou MSS2P3HM3_A/H - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Mult Dev A/T Chgs 23/Nov/2021.pdf
Fich
MSS2P2 & MSS2P3.pdf

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Sètifikasyon & Manm

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MSS2P3HM3_A/H Image

MSS2P3HM3_A/H

Vishay General Semiconductor - Diodes Division
32D-MSS2P3HM3_A/H

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