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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleMURS160HE3_A/H
MURS160HE3_A/H Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

MURS160HE3_A/H - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
MURS160HE3_A/H
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-MURS160HE3_A/H
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 600V 2A DO214AA
Pake
DO-214AA, SMB
Done fèy
MURS140,160.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 137370

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon MURS160HE3_A/H Tech
Vishay General Semiconductor - Diodes Division - MURS160HE3_A/H espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - MURS160HE3_A/H

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.25 V @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 600 V  
Teknoloji Standard  
Founisè Aparèy pake DO-214AA (SMB)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Automotive, AEC-Q101  
Tan rekiperasyon ranvèse (trr) 75 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-214AA, SMB  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -65°C ~ 175°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 5 µA @ 600 V  
Kouran - Mwayèn Rectified (Io) 2A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz MURS160  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division MURS160HE3_A/H.

Pwodwi atribi MURS160HE3_A/H MURS160T3 MURS160-E3/5BT MURS160-E3/52T
Nimewo Pati MURS160HE3_A/H MURS160T3 MURS160-E3/5BT MURS160-E3/52T
Manifakti Vishay General Semiconductor - Diodes Division onsemi Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Pake / Ka DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Founisè Aparèy pake DO-214AA (SMB) SMB DO-214AA (SMB) DO-214AA (SMB)
Tan rekiperasyon ranvèse (trr) 75 ns 75 ns 75 ns 75 ns
Kouran - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V
Kouran - Mwayèn Rectified (Io) 2A 2A 2A 2A
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kapasite @ Vr, F - - - 10pF @ 4V, 1MHz
Teknoloji Standard Standard Standard Standard
Nimewo pwodwi baz MURS160 MURS16 MURS160 MURS160
Seri Automotive, AEC-Q101 - - -
Voltage - DC ranvèse (Vr) (Max) 600 V 600 V 600 V 600 V
Operating Tanperati - Junction -65°C ~ 175°C - -65°C ~ 175°C -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ Si 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A

MURS160HE3_A/H fich PDF

Download MURS160HE3_A/H PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou MURS160HE3_A/H - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Assembly site 28/Jun/2022.pdf
Fich
MURS140,160.pdf

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MURS160HE3_A/H

Vishay General Semiconductor - Diodes Division
32D-MURS160HE3_A/H

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