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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleRS07D-GS08
RS07D-GS08 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RS07D-GS08 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
RS07D-GS08
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-RS07D-GS08
ECAD modèl
Pati Deskripsyon
DIODE GP 200V 500MA DO219AB
Deskripsyon detaye
Pake
DO-219AB
Done fèy
RS07B thru RS07K.pdf
RoHs Status
Nan stok: 307330

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RS07D-GS08 Tech
Vishay General Semiconductor - Diodes Division - RS07D-GS08 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - RS07D-GS08

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.15 V @ 700 mA  
Voltage - DC ranvèse (Vr) (Max) 200 V  
Teknoloji Standard  
Founisè Aparèy pake DO-219AB (SMF)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Automotive, AEC-Q101  
Tan rekiperasyon ranvèse (trr) 150 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-219AB  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 10 µA @ 200 V  
Kouran - Mwayèn Rectified (Io) 500mA  
Kapasite @ Vr, F 9pF @ 4V, 1MHz  
Nimewo pwodwi baz RS07  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division RS07D-GS08.

Pwodwi atribi RS07D-GS08 RS07J-GS18 RS07K-GS08 RS07K-M-08
Nimewo Pati RS07D-GS08 RS07J-GS18 RS07K-GS08 RS07K-M-08
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -65°C ~ 175°C
Founisè Aparèy pake DO-219AB (SMF) DO-219AB (SMF) DO-219AB (SMF) DO-219AB (SMF)
Teknoloji Standard Standard Standard Standard
Tan rekiperasyon ranvèse (trr) 150 ns 250 ns 300 ns 300 ns
Kouran - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 600 V 2 µA @ 800 V 2 µA @ 800 V
Seri Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101 Automotive, AEC-Q101
Pake / Ka DO-219AB DO-219AB DO-219AB DO-219AB
Voltage - DC ranvèse (Vr) (Max) 200 V 600 V 800 V 800 V
Voltage - Forward (Vf) (Max) @ Si 1.15 V @ 700 mA 1.15 V @ 700 mA 1.3 V @ 1 A 1.3 V @ 1 A
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz RS07 RS07 RS07 RS07
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kapasite @ Vr, F 9pF @ 4V, 1MHz 9pF @ 4V, 1MHz 4pF @ 4V, 1MHz -
Kouran - Mwayèn Rectified (Io) 500mA 500mA 500mA 500mA

RS07D-GS08 fich PDF

Download RS07D-GS08 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou RS07D-GS08 - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Mult Dev Plating House Add 15/Jan/2021.pdf
Fich
RS07B thru RS07K.pdf

Shipment

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Sètifikasyon & Manm

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RS07D-GS08 Image

RS07D-GS08

Vishay General Semiconductor - Diodes Division
32D-RS07D-GS08

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