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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleRS3G-E3/57T
RS3G-E3/57T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RS3G-E3/57T - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
RS3G-E3/57T
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-RS3G-E3/57T
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 400V 3A DO214AB
Deskripsyon detaye
Pake
DO-214AB, SMC
Done fèy
RS3A thru RS3K.pdf
RoHs Status
Nan stok: 114910

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon RS3G-E3/57T Tech
Vishay General Semiconductor - Diodes Division - RS3G-E3/57T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - RS3G-E3/57T

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.3 V @ 2.5 A  
Voltage - DC ranvèse (Vr) (Max) 400 V  
Teknoloji Standard  
Founisè Aparèy pake DO-214AB (SMC)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 150 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-214AB, SMC  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 10 µA @ 400 V  
Kouran - Mwayèn Rectified (Io) 3A  
Kapasite @ Vr, F 44pF @ 4V, 1MHz  
Nimewo pwodwi baz RS3G  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division RS3G-E3/57T.

Pwodwi atribi RS3G-E3/57T RS3J-E3/57T RS3MB-13-F RS3JB-13-F
Nimewo Pati RS3G-E3/57T RS3J-E3/57T RS3MB-13-F RS3JB-13-F
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Diodes Incorporated Diodes Incorporated
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C
Pake / Ka DO-214AB, SMC DO-214AB, SMC DO-214AA, SMB DO-214AA, SMB
Seri - - - -
Kouran - Mwayèn Rectified (Io) 3A 3A 3A 3A
Founisè Aparèy pake DO-214AB (SMC) DO-214AB (SMC) SMB SMB
Nimewo pwodwi baz RS3G RS3J RS3M RS3J
Voltage - Forward (Vf) (Max) @ Si 1.3 V @ 2.5 A 1.3 V @ 2.5 A 1.3 V @ 3 A 1.3 V @ 3 A
Kouran - Reverse Leakage @ Vr 10 µA @ 400 V 10 µA @ 600 V 5 µA @ 1000 V 5 µA @ 600 V
Tan rekiperasyon ranvèse (trr) 150 ns 250 ns 500 ns 250 ns
Kapasite @ Vr, F 44pF @ 4V, 1MHz 34pF @ 4V, 1MHz 50pF @ 4V, 1MHz 50pF @ 4V, 1MHz
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji Standard Standard Standard Standard
Voltage - DC ranvèse (Vr) (Max) 400 V 600 V 1000 V 600 V
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

RS3G-E3/57T fich PDF

Download RS3G-E3/57T PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou RS3G-E3/57T - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Multiple Parts 30/Mar/2022.pdf
Fich
RS3A thru RS3K.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
RS3G-E3/57T Image

RS3G-E3/57T

Vishay General Semiconductor - Diodes Division
32D-RS3G-E3/57T

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