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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleS2J-E3/52T
S2J-E3/52T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

S2J-E3/52T - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
S2J-E3/52T
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-S2J-E3/52T
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 600V 1.5A DO214AA
Deskripsyon detaye
Pake
DO-214AA, SMB
Done fèy
S2A thru S2M.pdf
RoHs Status
Nan stok: 236740

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon S2J-E3/52T Tech
Vishay General Semiconductor - Diodes Division - S2J-E3/52T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - S2J-E3/52T

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.15 V @ 1.5 A  
Voltage - DC ranvèse (Vr) (Max) 600 V  
Teknoloji Standard  
Founisè Aparèy pake DO-214AA (SMB)  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 2 µs  
Pwodwi atribi Valè atribi  
Pake / Ka DO-214AA, SMB  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 1 µA @ 600 V  
Kouran - Mwayèn Rectified (Io) 1.5A  
Kapasite @ Vr, F 16pF @ 4V, 1MHz  
Nimewo pwodwi baz S2J  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division S2J-E3/52T.

Pwodwi atribi S2J-E3/52T STPS5H100B S2JA-13-F S2JHE3_A/I
Nimewo Pati S2J-E3/52T STPS5H100B S2JA-13-F S2JHE3_A/I
Manifakti Vishay General Semiconductor - Diodes Division STMicroelectronics Diodes Incorporated Vishay General Semiconductor - Diodes Division
Nimewo pwodwi baz S2J STPS5 S2J S2J
Seri - - - Automotive, AEC-Q101
Vitès Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Kapasite @ Vr, F 16pF @ 4V, 1MHz - 20pF @ 4V, 1MHz 16pF @ 4V, 1MHz
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Voltage - Forward (Vf) (Max) @ Si 1.15 V @ 1.5 A 730 mV @ 5 A 1.15 V @ 1.5 A 1.15 V @ 1.5 A
Teknoloji Standard Schottky Standard Standard
Tan rekiperasyon ranvèse (trr) 2 µs - - 2 µs
Founisè Aparèy pake DO-214AA (SMB) DPAK SMA DO-214AA (SMB)
Operating Tanperati - Junction -55°C ~ 150°C 175°C (Max) -65°C ~ 150°C -55°C ~ 150°C
Kouran - Reverse Leakage @ Vr 1 µA @ 600 V 3.5 µA @ 100 V 5 µA @ 600 V 1 µA @ 600 V
Pake / Ka DO-214AA, SMB TO-252-3, DPak (2 Leads + Tab), SC-63 DO-214AC, SMA DO-214AA, SMB
Voltage - DC ranvèse (Vr) (Max) 600 V 100 V 600 V 600 V
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Tape & Reel (TR)
Kouran - Mwayèn Rectified (Io) 1.5A 5A 1.5A 1.5A

S2J-E3/52T fich PDF

Download S2J-E3/52T PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou S2J-E3/52T - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Multiple Parts 21/Jun/2022.pdf
Fich
S2A thru S2M.pdf

Shipment

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S2J-E3/52T Image

S2J-E3/52T

Vishay General Semiconductor - Diodes Division
32D-S2J-E3/52T

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