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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleS3MHE3_A/I
S3MHE3_A/I Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

S3MHE3_A/I - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
S3MHE3_A/I
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-S3MHE3_A/I
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 1KV 3A DO214AB
Deskripsyon detaye
Pake
DO-214AB, SMC
Done fèy
S3A - S3M.pdf
RoHs Status
Nan stok: 196010

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon S3MHE3_A/I Tech
Vishay General Semiconductor - Diodes Division - S3MHE3_A/I espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - S3MHE3_A/I

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.15 V @ 2.5 A  
Voltage - DC ranvèse (Vr) (Max) 1000 V  
Teknoloji Standard  
Founisè Aparèy pake DO-214AB (SMC)  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri Automotive, AEC-Q101  
Tan rekiperasyon ranvèse (trr) 2.5 µs  
Pwodwi atribi Valè atribi  
Pake / Ka DO-214AB, SMC  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 10 µA @ 1000 V  
Kouran - Mwayèn Rectified (Io) 3A  
Kapasite @ Vr, F 60pF @ 4V, 1MHz  
Nimewo pwodwi baz S3M  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division S3MHE3_A/I.

Pwodwi atribi S3MHE3_A/I S3M R7 MA2J1110GL S3MB-13-F
Nimewo Pati S3MHE3_A/I S3M R7 MA2J1110GL S3MB-13-F
Manifakti Vishay General Semiconductor - Diodes Division Taiwan Semiconductor Corporation Panasonic Electronic Components Diodes Incorporated
Vitès Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Standard Recovery >500ns, > 200mA (Io)
Kouran - Reverse Leakage @ Vr 10 µA @ 1000 V 10 µA @ 1000 V 100 nA @ 75 V 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ Si 1.15 V @ 2.5 A 1.15 V @ 3 A 1.2 V @ 100 mA 1.15 V @ 3 A
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kouran - Mwayèn Rectified (Io) 3A 3A 100mA 3A
Pake / Ka DO-214AB, SMC DO-214AB, SMC SC-90, SOD-323F DO-214AA, SMB
Teknoloji Standard Standard Standard Standard
Seri Automotive, AEC-Q101 - - -
Voltage - DC ranvèse (Vr) (Max) 1000 V 1000 V 80 V 1000 V
Tan rekiperasyon ranvèse (trr) 2.5 µs 1.5 µs 3 ns -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite @ Vr, F 60pF @ 4V, 1MHz 60pF @ 4V, 1MHz 1.2pF @ 0V, 1MHz 40pF @ 4V, 1MHz
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C 150°C (Max) -65°C ~ 150°C
Nimewo pwodwi baz S3M - MA2J111 S3M
Founisè Aparèy pake DO-214AB (SMC) DO-214AB (SMC) SMini2-F3 SMB

S3MHE3_A/I fich PDF

Download S3MHE3_A/I PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou S3MHE3_A/I - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Assembly site 28/Jun/2022.pdf
Fich
S3A - S3M.pdf

Shipment

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Sètifikasyon & Manm

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S3MHE3_A/I Image

S3MHE3_A/I

Vishay General Semiconductor - Diodes Division
32D-S3MHE3_A/I

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