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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleS5J-E3/57T
S5J-E3/57T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

S5J-E3/57T - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
S5J-E3/57T
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-S5J-E3/57T
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 600V 5A DO214AB
Deskripsyon detaye
Pake
DO-214AB, SMC
Done fèy
S5A, S5B, S5D, S5G, S5J, S5K, S5M.pdf
RoHs Status
Nan stok: 141350

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon S5J-E3/57T Tech
Vishay General Semiconductor - Diodes Division - S5J-E3/57T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - S5J-E3/57T

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.15 V @ 5 A  
Voltage - DC ranvèse (Vr) (Max) 600 V  
Teknoloji Standard  
Founisè Aparèy pake DO-214AB (SMC)  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 2.5 µs  
Pwodwi atribi Valè atribi  
Pake / Ka DO-214AB, SMC  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 10 µA @ 600 V  
Kouran - Mwayèn Rectified (Io) 5A  
Kapasite @ Vr, F 40pF @ 4V, 1MHz  
Nimewo pwodwi baz S5J  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division S5J-E3/57T.

Pwodwi atribi S5J-E3/57T S5JHE3/57T US1B-M3/61T S5JC-13-F
Nimewo Pati S5J-E3/57T S5JHE3/57T US1B-M3/61T S5JC-13-F
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Diodes Incorporated
Nimewo pwodwi baz S5J S5J US1B S5J
Founisè Aparèy pake DO-214AB (SMC) DO-214AB (SMC) DO-214AC (SMA) SMC
Seri - Automotive, AEC-Q101 - -
Vitès Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Pake / Ka DO-214AB, SMC DO-214AB, SMC DO-214AC, SMA DO-214AB, SMC
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -65°C ~ 150°C
Tan rekiperasyon ranvèse (trr) 2.5 µs 2.5 µs 50 ns -
Kapasite @ Vr, F 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 15pF @ 4V, 1MHz 40pF @ 4V, 1MHz
Kouran - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 100 V 10 µA @ 600 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji Standard Standard Standard Standard
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kouran - Mwayèn Rectified (Io) 5A 5A 1A 5A
Voltage - Forward (Vf) (Max) @ Si 1.15 V @ 5 A 1.15 V @ 5 A 1 V @ 1 A 1.15 V @ 5 A
Voltage - DC ranvèse (Vr) (Max) 600 V 600 V 100 V 600 V

S5J-E3/57T fich PDF

Download S5J-E3/57T PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou S5J-E3/57T - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Multiple Parts 30/Mar/2022.pdf
Fich
S5A, S5B, S5D, S5G, S5J, S5K, S5M.pdf

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S5J-E3/57T Image

S5J-E3/57T

Vishay General Semiconductor - Diodes Division
32D-S5J-E3/57T

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