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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSA2M-M3/61T
SA2M-M3/61T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SA2M-M3/61T - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
SA2M-M3/61T
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-SA2M-M3/61T
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 1KV 2A DO214AC
Deskripsyon detaye
Pake
DO-214AC, SMA
Done fèy
SA2B-M3 thru SA2M-M3.pdf
RoHs Status
Nan stok: 588800

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon SA2M-M3/61T Tech
Vishay General Semiconductor - Diodes Division - SA2M-M3/61T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - SA2M-M3/61T

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 2 A  
Voltage - DC ranvèse (Vr) (Max) 1000 V  
Teknoloji Standard  
Founisè Aparèy pake DO-214AC (SMA)  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 1.5 µs  
Pwodwi atribi Valè atribi  
Pake / Ka DO-214AC, SMA  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 3 µA @ 1000 V  
Kouran - Mwayèn Rectified (Io) 2A  
Kapasite @ Vr, F 11pF @ 4V, 1MHz  
Nimewo pwodwi baz SA2  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division SA2M-M3/61T.

Pwodwi atribi SA2M-M3/61T SA2B-E3/61T SA2M-E3/5AT SA2K-E3/5AT
Nimewo Pati SA2M-M3/61T SA2B-E3/61T SA2M-E3/5AT SA2K-E3/5AT
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Teknoloji Standard Standard Standard Standard
Nimewo pwodwi baz SA2 SA2 SA2 SA2
Vitès Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Seri - - - -
Kouran - Mwayèn Rectified (Io) 2A 2A 2A 2A
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Tan rekiperasyon ranvèse (trr) 1.5 µs 1.5 µs 1.5 µs 1.5 µs
Pake / Ka DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Kouran - Reverse Leakage @ Vr 3 µA @ 1000 V 3 µA @ 100 V 3 µA @ 1000 V 3 µA @ 800 V
Kapasite @ Vr, F 11pF @ 4V, 1MHz 11pF @ 4V, 1MHz 11pF @ 4V, 1MHz 11pF @ 4V, 1MHz
Founisè Aparèy pake DO-214AC (SMA) DO-214AC (SMA) DO-214AC (SMA) DO-214AC (SMA)
Voltage - DC ranvèse (Vr) (Max) 1000 V 100 V 1000 V 800 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 2 A 1.1 V @ 2 A 1.1 V @ 2 A 1.1 V @ 2 A

SA2M-M3/61T fich PDF

Download SA2M-M3/61T PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou SA2M-M3/61T - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Multiple Parts 21/Jun/2022.pdf
Fich
SA2B-M3 thru SA2M-M3.pdf

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Sètifikasyon & Manm

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SA2M-M3/61T Image

SA2M-M3/61T

Vishay General Semiconductor - Diodes Division
32D-SA2M-M3/61T

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