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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSB1H100-E3/54
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SB1H100-E3/54 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
SB1H100-E3/54
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-SB1H100-E3/54
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 100V 1A DO204AL
Deskripsyon detaye
Pake
DO-204AL, DO-41, Axial
Done fèy
SB1H90, SB1H100.pdf
RoHs Status
Nan stok: 417030

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SB1H100-E3/54 Tech
Vishay General Semiconductor - Diodes Division - SB1H100-E3/54 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - SB1H100-E3/54

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 770 mV @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 100 V  
Teknoloji Schottky  
Founisè Aparèy pake DO-204AL (DO-41)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka DO-204AL, DO-41, Axial  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction 175°C (Max)  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 1 µA @ 100 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz SB1H100  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division SB1H100-E3/54.

Pwodwi atribi SB1H100-E3/54 SB190-T SB180-T SB1H100-E3/73
Nimewo Pati SB1H100-E3/54 SB190-T SB180-T SB1H100-E3/73
Manifakti Vishay General Semiconductor - Diodes Division Diodes Incorporated Diodes Incorporated Vishay General Semiconductor - Diodes Division
Kouran - Mwayèn Rectified (Io) 1A 1A 1A 1A
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ Si 770 mV @ 1 A 800 mV @ 1 A 800 mV @ 1 A 770 mV @ 1 A
Founisè Aparèy pake DO-204AL (DO-41) DO-41 DO-41 DO-204AL (DO-41)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kapasite @ Vr, F - - - -
Kouran - Reverse Leakage @ Vr 1 µA @ 100 V 500 µA @ 90 V 500 µA @ 80 V 1 µA @ 100 V
Teknoloji Schottky Schottky Schottky Schottky
Operating Tanperati - Junction 175°C (Max) -65°C ~ 125°C -65°C ~ 125°C 175°C (Max)
Nimewo pwodwi baz SB1H100 SB190 SB180 SB1H100
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Pake / Ka DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Voltage - DC ranvèse (Vr) (Max) 100 V 90 V 80 V 100 V
Seri - - - -

SB1H100-E3/54 fich PDF

Download SB1H100-E3/54 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou SB1H100-E3/54 - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Mult Schotkky REC Assembly Site Add 22/Sep/2017.pdf
Fich
SB1H90, SB1H100.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Vishay General Semiconductor - Diodes Division

SB1H100-E3/54

Vishay General Semiconductor - Diodes Division
32D-SB1H100-E3/54

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