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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSD103AW-E3-08
SD103AW-E3-08 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SD103AW-E3-08 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
SD103AW-E3-08
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-SD103AW-E3-08
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 40V SOD123
Deskripsyon detaye
Pake
SOD-123
Done fèy
SD103xW.pdf
RoHs Status
Nan stok: 467750

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Espesifikasyon

Espesifikasyon SD103AW-E3-08 Tech
Vishay General Semiconductor - Diodes Division - SD103AW-E3-08 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - SD103AW-E3-08

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 600 mV @ 200 mA  
Voltage - DC ranvèse (Vr) (Max) 40 V  
Teknoloji Schottky  
Founisè Aparèy pake SOD-123  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 10 ns  
Pwodwi atribi Valè atribi  
Pake / Ka SOD-123  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction 125°C (Max)  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 5 µA @ 30 V  
Kouran - Mwayèn Rectified (Io) -  
Kapasite @ Vr, F 50pF @ 0V, 1MHz  
Nimewo pwodwi baz SD103  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division SD103AW-E3-08.

Pwodwi atribi SD103AW-E3-08 SD103AW-E3-18 SD103AW-7-F SD103AW-HE3-08
Nimewo Pati SD103AW-E3-08 SD103AW-E3-18 SD103AW-7-F SD103AW-HE3-08
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Diodes Incorporated Vishay General Semiconductor - Diodes Division
Kouran - Mwayèn Rectified (Io) - - 350mA 350mA
Kapasite @ Vr, F 50pF @ 0V, 1MHz 50pF @ 0V, 1MHz 28pF @ 0V, 1MHz 50pF @ 0V, 1MHz
Teknoloji Schottky Schottky Schottky Schottky
Founisè Aparèy pake SOD-123 SOD-123 SOD-123 SOD-123
Voltage - Forward (Vf) (Max) @ Si 600 mV @ 200 mA 600 mV @ 200 mA 600 mV @ 200 mA 600 mV @ 200 mA
Operating Tanperati - Junction 125°C (Max) 125°C (Max) -65°C ~ 125°C -55°C ~ 150°C
Voltage - DC ranvèse (Vr) (Max) 40 V 40 V 40 V 40 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Nimewo pwodwi baz SD103 SD103 SD103 SD103
Kouran - Reverse Leakage @ Vr 5 µA @ 30 V 5 µA @ 30 V 5 µA @ 30 V 5 µA @ 30 V
Pake / Ka SOD-123 SOD-123 SOD-123 SOD-123
Seri - - - Automotive, AEC-Q101
Tan rekiperasyon ranvèse (trr) 10 ns 10 ns 10 ns 10 ns
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

SD103AW-E3-08 fich PDF

Download SD103AW-E3-08 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou SD103AW-E3-08 - Vishay General Semiconductor - Diodes Division.

Fich
SD103xW.pdf

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SD103AW-E3-08 Image

SD103AW-E3-08

Vishay General Semiconductor - Diodes Division
32D-SD103AW-E3-08

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