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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArraySS10P3C-M3/86A
SS10P3C-M3/86A Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SS10P3C-M3/86A - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
SS10P3C-M3/86A
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-SS10P3C-M3/86A
ECAD modèl
Pati Deskripsyon
DIODE ARRAY SCHOTTKY 30V TO277A
Pake
TO-277, 3-PowerDFN
Done fèy
SS10P3C & SS10P4C.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 64170

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SS10P3C-M3/86A Tech
Vishay General Semiconductor - Diodes Division - SS10P3C-M3/86A espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - SS10P3C-M3/86A

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 530 mV @ 5 A  
Voltage - DC ranvèse (Vr) (Max) 30 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-277A (SMPC)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri eSMP®  
Pake / Ka TO-277, 3-PowerDFN  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 550 µA @ 30 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 5A  
Nimewo pwodwi baz SS10P3  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division SS10P3C-M3/86A.

Pwodwi atribi SS10P3C-M3/86A SS10P2CLHM3/86A SS10P2CL-M3/86A SS10P3CHM3/86A
Nimewo Pati SS10P3C-M3/86A SS10P2CLHM3/86A SS10P2CL-M3/86A SS10P3CHM3/86A
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 5A 5A 5A 5A
Pake / Ka TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Voltage - Forward (Vf) (Max) @ Si 530 mV @ 5 A 520 mV @ 5 A 520 mV @ 5 A 530 mV @ 5 A
Kouran - Reverse Leakage @ Vr 550 µA @ 30 V 850 µA @ 20 V 850 µA @ 20 V 550 µA @ 30 V
Teknoloji Schottky Schottky Schottky Schottky
Nimewo pwodwi baz SS10P3 SS10P2 SS10P2 SS10P3
Voltage - DC ranvèse (Vr) (Max) 30 V 20 V 20 V 30 V
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Konte genyen dyod 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Seri eSMP® eSMP® eSMP® eSMP®
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Founisè Aparèy pake TO-277A (SMPC) TO-277A (SMPC) TO-277A (SMPC) TO-277A (SMPC)

SS10P3C-M3/86A fich PDF

Download SS10P3C-M3/86A PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou SS10P3C-M3/86A - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
MSSx/SSx 21/Jun/2022.pdf
Fich
SS10P3C & SS10P4C.pdf

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SS10P3C-M3/86A Image

SS10P3C-M3/86A

Vishay General Semiconductor - Diodes Division
32D-SS10P3C-M3/86A

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