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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSS14-E3/61T
SS14-E3/61T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
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SS14-E3/61T - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
SS14-E3/61T
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-SS14-E3/61T
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 40V 1A DO214AC
Pake
DO-214AC, SMA
Done fèy
SS12-SS16.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 224940

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SS14-E3/61T Tech
Vishay General Semiconductor - Diodes Division - SS14-E3/61T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - SS14-E3/61T

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 500 mV @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 40 V  
Teknoloji Schottky  
Founisè Aparèy pake DO-214AC (SMA)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka DO-214AC, SMA  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -65°C ~ 125°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 200 µA @ 40 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz SS14  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division SS14-E3/61T.

Pwodwi atribi SS14-E3/61T SS14-E3/5AT SS14-LTP SS14-7000HE3_A/I
Nimewo Pati SS14-E3/61T SS14-E3/5AT SS14-LTP SS14-7000HE3_A/I
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Micro Commercial Co Vishay General Semiconductor - Diodes Division
Operating Tanperati - Junction -65°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C -65°C ~ 150°C
Teknoloji Schottky Schottky Schottky Schottky
Voltage - DC ranvèse (Vr) (Max) 40 V 40 V 40 V 40 V
Kapasite @ Vr, F - - 52pF @ 4V, 1MHz -
Founisè Aparèy pake DO-214AC (SMA) DO-214AC (SMA) DO-214AC (SMA) DO-214AC (SMA)
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Nimewo pwodwi baz SS14 SS14 SS14 SS14
Kouran - Mwayèn Rectified (Io) 1A 1A 1A 1A
Pake / Ka DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Seri - - - Automotive, AEC-Q101
Kouran - Reverse Leakage @ Vr 200 µA @ 40 V 200 µA @ 40 V 500 µA @ 40 V 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ Si 500 mV @ 1 A 500 mV @ 1 A 500 mV @ 1 A 500 mV @ 1 A

SS14-E3/61T fich PDF

Download SS14-E3/61T PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou SS14-E3/61T - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Multiple Parts 21/Jun/2022.pdf
Fich
SS12-SS16.pdf

Shipment

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SS14-E3/61T Image

SS14-E3/61T

Vishay General Semiconductor - Diodes Division
32D-SS14-E3/61T

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