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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSS16HE3_A/H
SS16HE3_A/H Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SS16HE3_A/H - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
SS16HE3_A/H
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-SS16HE3_A/H
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 60V 1A DO214AC
Pake
DO-214AC, SMA
Done fèy
SS12-SS16.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 3810

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SS16HE3_A/H Tech
Vishay General Semiconductor - Diodes Division - SS16HE3_A/H espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - SS16HE3_A/H

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 750 mV @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 60 V  
Teknoloji Schottky  
Founisè Aparèy pake DO-214AC (SMA)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Automotive, AEC-Q101  
Pake / Ka DO-214AC, SMA  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 200 µA @ 60 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz SS16  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division SS16HE3_A/H.

Pwodwi atribi SS16HE3_A/H SS16E-TP SS16HE3/61T SS16HM2G
Nimewo Pati SS16HE3_A/H SS16E-TP SS16HE3/61T SS16HM2G
Manifakti Vishay General Semiconductor - Diodes Division Micro Commercial Co Vishay General Semiconductor - Diodes Division TSC (Taiwan Semiconductor)
Seri Automotive, AEC-Q101 - - Automotive, AEC-Q101
Kouran - Mwayèn Rectified (Io) 1A 1A 1A 1A
Nimewo pwodwi baz SS16 SS16 SS16 -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite @ Vr, F - 110pF @ 4V, 1MHz - -
Kouran - Reverse Leakage @ Vr 200 µA @ 60 V 500 µA @ 60 V 200 µA @ 60 V 200µA @ 60V
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery = 200mA (Io)
Voltage - DC ranvèse (Vr) (Max) 60 V 60 V 60 V 60V
Voltage - Forward (Vf) (Max) @ Si 750 mV @ 1 A 700 mV @ 1 A 750 mV @ 1 A 750mV @ 1A
Founisè Aparèy pake DO-214AC (SMA) SMAE DO-214AC (SMA) DO-214AC (SMA)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) -
Pake / Ka DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Operating Tanperati - Junction -65°C ~ 150°C -55°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C
Teknoloji Schottky Schottky Schottky -

SS16HE3_A/H fich PDF

Download SS16HE3_A/H PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou SS16HE3_A/H - Vishay General Semiconductor - Diodes Division.

Fich
SS12-SS16.pdf
PCN pati estati chanjman
SSYYYY/BYS 16/Jan/2017.pdf

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Sètifikasyon & Manm

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SS16HE3_A/H Image

SS16HE3_A/H

Vishay General Semiconductor - Diodes Division
32D-SS16HE3_A/H

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