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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSS3P3L-M3/86A
SS3P3L-M3/86A Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SS3P3L-M3/86A - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
SS3P3L-M3/86A
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-SS3P3L-M3/86A
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 30V 3A TO277A
Pake
TO-277, 3-PowerDFN
Done fèy
SS3P3L,SS3P4L.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 200360

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SS3P3L-M3/86A Tech
Vishay General Semiconductor - Diodes Division - SS3P3L-M3/86A espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - SS3P3L-M3/86A

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 470 mV @ 3 A  
Voltage - DC ranvèse (Vr) (Max) 30 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-277A (SMPC)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri eSMP®  
Pake / Ka TO-277, 3-PowerDFN  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 250 µA @ 30 V  
Kouran - Mwayèn Rectified (Io) 3A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz SS3P3  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division SS3P3L-M3/86A.

Pwodwi atribi SS3P3L-M3/86A SS3P4-M3/84A SS3P3HM3/84A SS3P4-6002M3/84A
Nimewo Pati SS3P3L-M3/86A SS3P4-M3/84A SS3P3HM3/84A SS3P4-6002M3/84A
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Nimewo pwodwi baz SS3P3 SS3P4 SS3P3 -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka TO-277, 3-PowerDFN DO-220AA DO-220AA DO-220AA
Seri eSMP® eSMP® Automotive, AEC-Q101, eSMP® Automotive, AEC-Q101
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kapasite @ Vr, F - 130pF @ 4V, 1MHz 130pF @ 4V, 1MHz 130pF @ 4V, 1MHz
Kouran - Mwayèn Rectified (Io) 3A 3A 3A 3A
Kouran - Reverse Leakage @ Vr 250 µA @ 30 V 150 µA @ 40 V 200 µA @ 30 V 150 µA @ 40 V
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Teknoloji Schottky Schottky Schottky Schottky
Voltage - Forward (Vf) (Max) @ Si 470 mV @ 3 A 600 mV @ 3 A 580 mV @ 3 A 600 mV @ 3 A
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Founisè Aparèy pake TO-277A (SMPC) DO-220AA (SMP) DO-220AA (SMP) DO-220AA (SMP)
Voltage - DC ranvèse (Vr) (Max) 30 V 40 V 30 V 40 V

SS3P3L-M3/86A fich PDF

Download SS3P3L-M3/86A PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou SS3P3L-M3/86A - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
MSSx/SSx 21/Jun/2022.pdf
Fich
SS3P3L,SS3P4L.pdf

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SS3P3L-M3/86A Image

SS3P3L-M3/86A

Vishay General Semiconductor - Diodes Division
32D-SS3P3L-M3/86A

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