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Kay Pwodwi yo Diskresyon semiconductor pwodwi Diodes - Rèktifikateur - Single~~U3D-E3/57T~~

Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

~~Favori~~

U3D-E3/57T - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati: U3D-E3/57T

Manifakti: Vishay General Semiconductor – Diodes Division

Allelco Nimewo Pati: 32D-U3D-E3/57T

ECAD modèl

Pati Deskripsyon: DIODE GEN PURP 200V 2A DO214AB

Deskripsyon detaye

Pake: DO-214AB, SMC

Done fèy: U3B, U3C & U3D.pdf

RoHs Status

~~Konpare~~

Nan stok: 117710

Espesifikasyon

Espesifikasyon U3D-E3/57T Tech
Vishay General Semiconductor - Diodes Division - U3D-E3/57T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - U3D-E3/57T

Pwodwi atribi	Valè atribi
Manifakti	Vishay General Semiconductor – Diodes Division
Voltage - Forward (Vf) (Max) @ Si	900 mV @ 3 A
Voltage - DC ranvèse (Vr) (Max)	200 V
Teknoloji	Standard
Founisè Aparèy pake	DO-214AB (SMC)
Vitès	Fast Recovery =< 500ns, > 200mA (Io)
Seri	-
Tan rekiperasyon ranvèse (trr)	20 ns

Pwodwi atribi	Valè atribi
Pake / Ka	DO-214AB, SMC
Pakèt	Tape & Reel (TR)
Operating Tanperati - Junction	-55°C ~ 150°C
Mounting Kalite	Surface Mount
Kouran - Reverse Leakage @ Vr	10 µA @ 200 V
Kouran - Mwayèn Rectified (Io)	2A
Kapasite @ Vr, F	-
Nimewo pwodwi baz	U3D

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division U3D-E3/57T.

Pwodwi atribi
Nimewo Pati	U3D-E3/57T	DFLS160Q-7	FERD20U60DJF-TR	B0540W-7
Manifakti	Vishay General Semiconductor - Diodes Division	Diodes Incorporated	STMicroelectronics	Diodes Incorporated
Mounting Kalite	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Tanperati - Junction	-55°C ~ 150°C	-65°C ~ 150°C	150°C (Max)	-65°C ~ 150°C
Seri	-	Automotive, AEC-Q101	-	-
Tan rekiperasyon ranvèse (trr)	20 ns	-	-	-
Kouran - Mwayèn Rectified (Io)	2A	1A	20A	500mA
Pakèt	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ Si	900 mV @ 3 A	500 mV @ 1 A	510 mV @ 20 A	510 mV @ 500 mA
Nimewo pwodwi baz	U3D	DFLS160	FERD20	B0540
Vitès	Fast Recovery =< 500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)
Pake / Ka	DO-214AB, SMC	POWERDI®123	8-PowerVDFN	SOD-123
Teknoloji	Standard	Schottky	FERD (Field Effect Rectifier Diode)	Schottky
Kapasite @ Vr, F	-	67pF @ 10V, 1MHz	-	170pF @ 0V, 1MHz
Kouran - Reverse Leakage @ Vr	10 µA @ 200 V	100 µA @ 60 V	800 µA @ 60 V	20 µA @ 40 V
Voltage - DC ranvèse (Vr) (Max)	200 V	60 V	60 V	40 V
Founisè Aparèy pake	DO-214AB (SMC)	PowerDI™ 123	PowerFlat™ (5x6)	SOD-123

U3D-E3/57T fich PDF

Download U3D-E3/57T PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou U3D-E3/57T - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin: Multiple Parts 30/Mar/2022.pdf
Fich: U3B, U3C & U3D.pdf

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Vishay General Semiconductor - Diodes Division
32D-U3D-E3/57T

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