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Kay Pwodwi yo Diskresyon semiconductor pwodwi Diodes - Rèktifikateur - Single~~UH1D-E3/61T~~

Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

~~Favori~~

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UH1D-E3/61T - Vishay General Semiconductor - Diodes Division

Name: Vishay General Semiconductor - Diodes Division UH1D-E3/61T
Brand: Vishay General Semiconductor - Diodes Division
SKU: UH1D-E3/61T
Availability: InStock
Rating: 5 (7 reviews)

Manifakti Nimewo Pati: UH1D-E3/61T

Manifakti: Vishay General Semiconductor – Diodes Division

Allelco Nimewo Pati: 32D-UH1D-E3/61T

ECAD modèl

Pati Deskripsyon: DIODE GEN PURP 200V 1A DO214AC

Pake: DO-214AC, SMA

Done fèy: UH1B, UH1C & UH1D.pdf

RoHs Status

~~Konpare~~

Sètifikasyon nou an

Nan stok: 5070

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Sètifikasyon nou an

Espesifikasyon

Espesifikasyon UH1D-E3/61T Tech
Vishay General Semiconductor - Diodes Division - UH1D-E3/61T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - UH1D-E3/61T

Pwodwi atribi	Valè atribi
Manifakti	Vishay General Semiconductor – Diodes Division
Voltage - Forward (Vf) (Max) @ Si	1.05 V @ 1 A
Voltage - DC ranvèse (Vr) (Max)	200 V
Teknoloji	Standard
Founisè Aparèy pake	DO-214AC (SMA)
Vitès	Fast Recovery =< 500ns, > 200mA (Io)
Seri	-
Tan rekiperasyon ranvèse (trr)	30 ns

Pwodwi atribi	Valè atribi
Pake / Ka	DO-214AC, SMA
Pakèt	Tape & Reel (TR)
Operating Tanperati - Junction	-55°C ~ 175°C
Mounting Kalite	Surface Mount
Kouran - Reverse Leakage @ Vr	1 µA @ 200 V
Kouran - Mwayèn Rectified (Io)	1A
Kapasite @ Vr, F	-
Nimewo pwodwi baz	UH1

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI	DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL)	1 (Unlimited)
Rive nan estati	REACH Unaffected
ECCN	EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division UH1D-E3/61T.

Pwodwi atribi
Nimewo Pati	UH1D-E3/61T	MBRB735	1N2438	UH1B-E3/61T
Manifakti	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division	Solid State Inc.	Vishay General Semiconductor - Diodes Division
Mounting Kalite	Surface Mount	Surface Mount	Stud Mount	Surface Mount
Teknoloji	Standard	Schottky	Standard	Standard
Seri	-	-	-	-
Operating Tanperati - Junction	-55°C ~ 175°C	-65°C ~ 150°C	-65°C ~ 200°C	-55°C ~ 175°C
Vitès	Fast Recovery =< 500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC ranvèse (Vr) (Max)	200 V	35 V	150 V	100 V
Voltage - Forward (Vf) (Max) @ Si	1.05 V @ 1 A	840 mV @ 15 A	1.1 V @ 200 A	1.05 V @ 1 A
Kapasite @ Vr, F	-	-	-	-
Kouran - Mwayèn Rectified (Io)	1A	7.5A	150A	1A
Founisè Aparèy pake	DO-214AC (SMA)	TO-263AB (D²PAK)	DO-8	DO-214AC (SMA)
Pake / Ka	DO-214AC, SMA	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	DO-205AA, DO-8, Stud	DO-214AC, SMA
Tan rekiperasyon ranvèse (trr)	30 ns	-	-	30 ns
Kouran - Reverse Leakage @ Vr	1 µA @ 200 V	100 µA @ 35 V	50 µA @ 150 V	1 µA @ 100 V
Pakèt	Tape & Reel (TR)	Tube	Box	Tape & Reel (TR)
Nimewo pwodwi baz	UH1	MBRB7	-	UH1

UH1D-E3/61T fich PDF

Download UH1D-E3/61T PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou UH1D-E3/61T - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò: Packaging Information.pdf
Fich: UH1B, UH1C & UH1D.pdf
PCN obsolescence/ eol: UHYYYY 05/Dec/2017.pdf

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UH1D-E3/61T

Vishay General Semiconductor - Diodes Division
32D-UH1D-E3/61T

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