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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleUS1JHE3_A/H
US1JHE3_A/H Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

US1JHE3_A/H - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
US1JHE3_A/H
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-US1JHE3_A/H
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 600V 1A DO214AC
Deskripsyon detaye
Pake
DO-214AC, SMA
Done fèy
US1JHE3_A/H.pdf
RoHs Status
Nan stok: 203890

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon US1JHE3_A/H Tech
Vishay General Semiconductor - Diodes Division - US1JHE3_A/H espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - US1JHE3_A/H

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.7 V @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 600 V  
Teknoloji Standard  
Founisè Aparèy pake DO-214AC (SMA)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Automotive, AEC-Q101  
Tan rekiperasyon ranvèse (trr) 75 ns  
Pwodwi atribi Valè atribi  
Pake / Ka DO-214AC, SMA  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 10 µA @ 600 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F 10pF @ 4V, 1MHz  
Nimewo pwodwi baz US1J  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division US1JHE3_A/H.

Pwodwi atribi US1JHE3_A/H US1J-TP US1JFA US1JFA
Nimewo Pati US1JHE3_A/H US1J-TP US1JFA US1JFA
Manifakti Vishay General Semiconductor - Diodes Division Micro Commercial Co Ampleon USA Inc. onsemi
Seri Automotive, AEC-Q101 - - -
Founisè Aparèy pake DO-214AC (SMA) DO-214AC (SMA) - SOD-123FA
Voltage - DC ranvèse (Vr) (Max) 600 V 600 V - 600 V
Kouran - Mwayèn Rectified (Io) 1A 1A - 1A
Kouran - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V - 5 µA @ 600 V
Tan rekiperasyon ranvèse (trr) 75 ns 75 ns - 75 ns
Pake / Ka DO-214AC, SMA DO-214AC, SMA - SOD-123W
Nimewo pwodwi baz US1J US1J - US1J
Mounting Kalite Surface Mount Surface Mount - Surface Mount
Pakèt Tape & Reel (TR) Tape & Reel (TR) Bulk Tape & Reel (TR)
Operating Tanperati - Junction -55°C ~ 150°C -65°C ~ 175°C - -55°C ~ 150°C
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) - Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ Si 1.7 V @ 1 A 1.7 V @ 1 A - 1.7 V @ 1 A
Teknoloji Standard Standard - Standard
Kapasite @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz - 15pF @ 4V, 1MHz

US1JHE3_A/H fich PDF

Download US1JHE3_A/H PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou US1JHE3_A/H - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò
Packaging Information.pdf
Asanble PCN/orijin
Assembly Site 26/Aug/2021.pdf

Shipment

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Sètifikasyon & Manm

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US1JHE3_A/H Image

US1JHE3_A/H

Vishay General Semiconductor - Diodes Division
32D-US1JHE3_A/H

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