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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArrayV40120C-E3/4W
V40120C-E3/4W Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

V40120C-E3/4W - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
V40120C-E3/4W
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-V40120C-E3/4W
ECAD modèl
Pati Deskripsyon
DIODE ARRAY SCHOTTKY 120V TO220
Deskripsyon detaye
Pake
TO-220-3
Done fèy
Vx40120C.pdf
RoHs Status
Nan stok: 26203

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon V40120C-E3/4W Tech
Vishay General Semiconductor - Diodes Division - V40120C-E3/4W espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - V40120C-E3/4W

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 880 mV @ 20 A  
Voltage - DC ranvèse (Vr) (Max) 120 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-220-3  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri TMBS®  
Pake / Ka TO-220-3  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati - Junction -40°C ~ 150°C  
Mounting Kalite Through Hole  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 500 µA @ 120 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 20A  
Nimewo pwodwi baz V40120  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division V40120C-E3/4W.

Pwodwi atribi V40120C-E3/4W V40100G-E3/45 V40120CI-M3/P V40100PW-M3/4W
Nimewo Pati V40120C-E3/4W V40100G-E3/45 V40120CI-M3/P V40100PW-M3/4W
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Pakèt Tube Tube Tube Tube
Operating Tanperati - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Voltage - DC ranvèse (Vr) (Max) 120 V 100 V 120 V 100 V
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 20A 20A 20A 20A
Seri TMBS® TMBS® TMBS® TMBS®
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Nimewo pwodwi baz V40120 V40100 V40120 V40100
Teknoloji Schottky Schottky Schottky Schottky
Voltage - Forward (Vf) (Max) @ Si 880 mV @ 20 A 810 mV @ 20 A 820 mV @ 20 A 770 mV @ 20 A
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-3P-3 Full Pack
Founisè Aparèy pake TO-220-3 TO-220-3 TO-220AB TO-3PW
Konte genyen dyod 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Kouran - Reverse Leakage @ Vr 500 µA @ 120 V 500 µA @ 100 V 700 µA @ 120 V 1 mA @ 100 V

V40120C-E3/4W fich PDF

Download V40120C-E3/4W PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou V40120C-E3/4W - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò
Packaging Information.pdf
Asanble PCN/orijin
New subcontractor 06/Apr/2016.pdf
Fich
Vx40120C.pdf

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V40120C-E3/4W Image

V40120C-E3/4W

Vishay General Semiconductor - Diodes Division
32D-V40120C-E3/4W

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