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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArrayV6W60C-M3/I
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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V6W60C-M3/I - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
V6W60C-M3/I
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-V6W60C-M3/I
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 6A 60V DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
V6W60C-M3.pdf
RoHs Status
Konpare
Nan stok: 4640

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Espesifikasyon

Espesifikasyon V6W60C-M3/I Tech
Vishay General Semiconductor - Diodes Division - V6W60C-M3/I espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - V6W60C-M3/I

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 570 mV @ 3 A  
Voltage - DC ranvèse (Vr) (Max) 60 V  
Teknoloji Schottky  
Founisè Aparèy pake D-PAK (TO-252AA)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri TMBS®  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -40°C ~ 150°C  
Mounting Kalite Surface Mount  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 2.2 mA @ 60 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 3A  
Nimewo pwodwi baz V6W60  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division V6W60C-M3/I.

Pwodwi atribi V6W60C-M3/I IRKD196/04 BAS40-04 ND412226
Nimewo Pati V6W60C-M3/I IRKD196/04 BAS40-04 ND412226
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Yangzhou Yangjie Electronic Technology Co.,Ltd Powerex Inc.
Nimewo pwodwi baz V6W60 IRKD196 BAS40 -
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 INT-A-PAK (3) TO-236-3, SC-59, SOT-23-3 POW-R-BLOK™ Module
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 3A 195A 200mA (DC) 260A
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Bulk
Voltage - DC ranvèse (Vr) (Max) 60 V 400 V 40 V 2200 V
Founisè Aparèy pake D-PAK (TO-252AA) Module SOT-23 POW-R-BLOK™ Module
Vitès Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Standard Recovery >500ns, > 200mA (Io)
Seri TMBS® - - -
Konte genyen dyod 1 Pair Common Cathode 1 Pair Series Connection 1 Pair Series Connection 1 Pair Series Connection
Teknoloji Schottky Standard Schottky Standard
Voltage - Forward (Vf) (Max) @ Si 570 mV @ 3 A - 1 V @ 40 mA 1.35 V @ 1500 A
Mounting Kalite Surface Mount Chassis Mount Surface Mount Chassis Mount
Operating Tanperati - Junction -40°C ~ 150°C - 125°C (Max) -40°C ~ 150°C
Kouran - Reverse Leakage @ Vr 2.2 mA @ 60 V 20 mA @ 400 V 200 nA @ 30 V 50 mA @ 2200 V

V6W60C-M3/I fich PDF

Download V6W60C-M3/I PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou V6W60C-M3/I - Vishay General Semiconductor - Diodes Division.

PCN obsolescence/ eol
Mult Dev EOL 20/Mar/2019.pdf Mult Devices EOL 05/Jun/2019.pdf
Fich
V6W60C-M3.pdf

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Vishay General Semiconductor - Diodes Division

V6W60C-M3/I

Vishay General Semiconductor - Diodes Division
32D-V6W60C-M3/I

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