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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArrayVB10150C-E3/4W
VB10150C-E3/4W Image
VB10150C-E3/4W Image - 1
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wè espesifikasyon pou detay pwodwi.
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VB10150C-E3/4W - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
VB10150C-E3/4W
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-VB10150C-E3/4W
ECAD modèl
Pati Deskripsyon
DIODE ARRAY SCHOTTKY 150V TO263
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
V(I)10150C.pdf
RoHs Status
Konpare
Nan stok: 88570

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Espesifikasyon

Espesifikasyon VB10150C-E3/4W Tech
Vishay General Semiconductor - Diodes Division - VB10150C-E3/4W espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - VB10150C-E3/4W

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.41 V @ 5 A  
Voltage - DC ranvèse (Vr) (Max) 150 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-263AB (D²PAK)  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri TMBS®  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 100 µA @ 150 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 5A  
Nimewo pwodwi baz VB10150  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division VB10150C-E3/4W.

Pwodwi atribi VB10150C-E3/4W 12CTQ035STRL MBR2035CT STTH12010TV1
Nimewo Pati VB10150C-E3/4W 12CTQ035STRL MBR2035CT STTH12010TV1
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Diodes Incorporated STMicroelectronics
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 5A 6A 20A 60A
Voltage - Forward (Vf) (Max) @ Si 1.41 V @ 5 A 600 mV @ 6 A 840 mV @ 20 A 2 V @ 60 A
Nimewo pwodwi baz VB10150 12CTQ MBR2035CT STTH12010
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 ISOTOP
Konte genyen dyod 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 2 Independent
Teknoloji Schottky Schottky Schottky Standard
Voltage - DC ranvèse (Vr) (Max) 150 V 35 V 35 V 1000 V
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Pakèt Tube Tape & Reel (TR) Tube Tube
Seri TMBS® - - -
Founisè Aparèy pake TO-263AB (D²PAK) TO-263AB (D²PAK) TO-220-3 ISOTOP®
Kouran - Reverse Leakage @ Vr 100 µA @ 150 V 800 µA @ 35 V 100 µA @ 35 V 20 µA @ 1000 V
Mounting Kalite Surface Mount Surface Mount Through Hole Chassis Mount
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 175°C -55°C ~ 150°C 150°C (Max)

VB10150C-E3/4W fich PDF

Download VB10150C-E3/4W PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou VB10150C-E3/4W - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Mult Dev Assembly Chg 20/Sep/2019.pdf
Fich
V(I)10150C.pdf

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VB10150C-E3/4W Image

VB10150C-E3/4W

Vishay General Semiconductor - Diodes Division
32D-VB10150C-E3/4W

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