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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArrayVS-32CTQ030PBF
VS-32CTQ030PBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

VS-32CTQ030PBF - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
VS-32CTQ030PBF
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-VS-32CTQ030PBF
ECAD modèl
Pati Deskripsyon
DIODE ARRAY SCHOTTKY 30V TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
VS-32CTQ025,30(N3,PbF).pdf
RoHs Status
Nan stok: 4750

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Espesifikasyon

Espesifikasyon VS-32CTQ030PBF Tech
Vishay General Semiconductor - Diodes Division - VS-32CTQ030PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - VS-32CTQ030PBF

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 490 mV @ 15 A  
Voltage - DC ranvèse (Vr) (Max) 30 V  
Teknoloji Schottky  
Founisè Aparèy pake TO-220-3  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-220-3  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Through Hole  
Konte genyen dyod 1 Pair Common Cathode  
Kouran - Reverse Leakage @ Vr 1.75 mA @ 30 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 15A  
Nimewo pwodwi baz 32CTQ030  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division VS-32CTQ030PBF.

Pwodwi atribi VS-32CTQ030PBF VS-32CTQ030STRRPBF VS-32CTQ030STRLPBF VS-36MB10A
Nimewo Pati VS-32CTQ030PBF VS-32CTQ030STRRPBF VS-32CTQ030STRLPBF VS-36MB10A
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 15A 15A 15A -
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) -
Voltage - DC ranvèse (Vr) (Max) 30 V 30 V 30 V -
Kouran - Reverse Leakage @ Vr 1.75 mA @ 30 V 1.75 mA @ 30 V 1.75 mA @ 30 V 10 µA @ 100 V
Nimewo pwodwi baz 32CTQ030 32CTQ030 32CTQ030 36MB10
Founisè Aparèy pake TO-220-3 TO-263AB (D²PAK) TO-263AB (D²PAK) D-34
Teknoloji Schottky Schottky Schottky Standard
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Bulk
Mounting Kalite Through Hole Surface Mount Surface Mount QC Terminal
Voltage - Forward (Vf) (Max) @ Si 490 mV @ 15 A 490 mV @ 15 A 490 mV @ 15 A -
Konte genyen dyod 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode -
Seri - - - -
Pake / Ka TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 4-Square, D-34

VS-32CTQ030PBF fich PDF

Download VS-32CTQ030PBF PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou VS-32CTQ030PBF - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò
Packaging Information.pdf
Asanble PCN/orijin
DD-007-2014 Rev.0 14/Apr/2014.pdf
Fich
VS-32CTQ025,30(N3,PbF).pdf

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VS-32CTQ030PBF Image

VS-32CTQ030PBF

Vishay General Semiconductor - Diodes Division
32D-VS-32CTQ030PBF

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